JPS54161273A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54161273A
JPS54161273A JP7008678A JP7008678A JPS54161273A JP S54161273 A JPS54161273 A JP S54161273A JP 7008678 A JP7008678 A JP 7008678A JP 7008678 A JP7008678 A JP 7008678A JP S54161273 A JPS54161273 A JP S54161273A
Authority
JP
Japan
Prior art keywords
moisture
insulating film
corrosion
immersing
hollow container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7008678A
Other languages
Japanese (ja)
Inventor
Takashi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7008678A priority Critical patent/JPS54161273A/en
Publication of JPS54161273A publication Critical patent/JPS54161273A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To reduce the deterioration rate of a semiconductor device by electrically providing a radical metal film onto the blank space part or surface of the insulating film on the semiconductor element surface from its circumference.
CONSTITUTION: On the surface of a semiconductor element, metal easy to corrode by moisture including impurities such as Al via an insulating film. When moisture sealed in a hollow container or moisture immersing is much, it becomes dew on the element surface to deteriorate characteristics, causing corrosion if the electrode is made of Al. Corrosion relates to the quantity of moisture and Al area and when the quantity of moisture is fixed, the etching speed is faster as the Al are smaller. With a little moisture, corrosion stops soon and the element function will never deteriorate. In case of a resin-sealed device, an Al thin film on an insulating film is provided to the outer circumference of the element and immersion to the element surface is reduced corresponding to the quantity of immersing moisture, so that the deterioration rate can be reduced as well as a hollow container.
COPYRIGHT: (C)1979,JPO&Japio
JP7008678A 1978-06-09 1978-06-09 Semiconductor device Pending JPS54161273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7008678A JPS54161273A (en) 1978-06-09 1978-06-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7008678A JPS54161273A (en) 1978-06-09 1978-06-09 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54161273A true JPS54161273A (en) 1979-12-20

Family

ID=13421366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7008678A Pending JPS54161273A (en) 1978-06-09 1978-06-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54161273A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830156A (en) * 1981-08-17 1983-02-22 Nec Corp Semiconductor integrated circuit
JP2020053595A (en) * 2018-09-27 2020-04-02 三菱電機株式会社 Semiconductor device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830156A (en) * 1981-08-17 1983-02-22 Nec Corp Semiconductor integrated circuit
JP2020053595A (en) * 2018-09-27 2020-04-02 三菱電機株式会社 Semiconductor device and method of manufacturing the same

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