JPS54161273A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54161273A JPS54161273A JP7008678A JP7008678A JPS54161273A JP S54161273 A JPS54161273 A JP S54161273A JP 7008678 A JP7008678 A JP 7008678A JP 7008678 A JP7008678 A JP 7008678A JP S54161273 A JPS54161273 A JP S54161273A
- Authority
- JP
- Japan
- Prior art keywords
- moisture
- insulating film
- corrosion
- immersing
- hollow container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To reduce the deterioration rate of a semiconductor device by electrically providing a radical metal film onto the blank space part or surface of the insulating film on the semiconductor element surface from its circumference.
CONSTITUTION: On the surface of a semiconductor element, metal easy to corrode by moisture including impurities such as Al via an insulating film. When moisture sealed in a hollow container or moisture immersing is much, it becomes dew on the element surface to deteriorate characteristics, causing corrosion if the electrode is made of Al. Corrosion relates to the quantity of moisture and Al area and when the quantity of moisture is fixed, the etching speed is faster as the Al are smaller. With a little moisture, corrosion stops soon and the element function will never deteriorate. In case of a resin-sealed device, an Al thin film on an insulating film is provided to the outer circumference of the element and immersion to the element surface is reduced corresponding to the quantity of immersing moisture, so that the deterioration rate can be reduced as well as a hollow container.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7008678A JPS54161273A (en) | 1978-06-09 | 1978-06-09 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7008678A JPS54161273A (en) | 1978-06-09 | 1978-06-09 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54161273A true JPS54161273A (en) | 1979-12-20 |
Family
ID=13421366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7008678A Pending JPS54161273A (en) | 1978-06-09 | 1978-06-09 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54161273A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5830156A (en) * | 1981-08-17 | 1983-02-22 | Nec Corp | Semiconductor integrated circuit |
JP2020053595A (en) * | 2018-09-27 | 2020-04-02 | 三菱電機株式会社 | Semiconductor device and method of manufacturing the same |
-
1978
- 1978-06-09 JP JP7008678A patent/JPS54161273A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5830156A (en) * | 1981-08-17 | 1983-02-22 | Nec Corp | Semiconductor integrated circuit |
JP2020053595A (en) * | 2018-09-27 | 2020-04-02 | 三菱電機株式会社 | Semiconductor device and method of manufacturing the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS56122156A (en) | Lead frame for semiconductor device | |
JPS54161273A (en) | Semiconductor device | |
JPS57192846A (en) | Humidity sensor and manufacture thereof | |
JPS5364467A (en) | Electrode | |
JPS5267963A (en) | Manufacture of semiconductor unit | |
JPS56122155A (en) | Lead frame for semiconductor device | |
JPS5325355A (en) | Production of semiconductor device | |
JPS523383A (en) | Manufacturing method of semiconductor device electrode | |
JPS5496366A (en) | Semiconductor device | |
JPS5252368A (en) | Semiconductor device | |
JPS54150078A (en) | Semiconductor device | |
JPS52104869A (en) | Manufacture for semiconductor device | |
JPS54126097A (en) | Moisture detecting element | |
JPS5417075A (en) | Humidity detecting element | |
JPS5516425A (en) | Semiconductor device | |
JPS5270766A (en) | Semiconductor device | |
JPS5245270A (en) | Semiconductor device | |
JPS5317274A (en) | Electrode structure of semiconductor element | |
JPS5583128A (en) | Manufacturing method of gas discharging panel | |
JPS5376752A (en) | Production of semionductor device | |
JPS54117681A (en) | Production of semiconductor device | |
JPS5544755A (en) | Semiconductor container | |
JPS5582456A (en) | Semiconductor device | |
JPS5565439A (en) | Manufacture of semiconductor device | |
JPS5758333A (en) | Manufacture of semiconductor device |