JPS5415682A - Manufacture of field effect semiconductor device - Google Patents
Manufacture of field effect semiconductor deviceInfo
- Publication number
- JPS5415682A JPS5415682A JP8131077A JP8131077A JPS5415682A JP S5415682 A JPS5415682 A JP S5415682A JP 8131077 A JP8131077 A JP 8131077A JP 8131077 A JP8131077 A JP 8131077A JP S5415682 A JPS5415682 A JP S5415682A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- field effect
- effect semiconductor
- oxidizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To manufacture a Schottky barrier FET by oxidizing the GaAs itself through the anodized method and then using the oxide film for the surface protective film.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8131077A JPS5415682A (en) | 1977-07-06 | 1977-07-06 | Manufacture of field effect semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8131077A JPS5415682A (en) | 1977-07-06 | 1977-07-06 | Manufacture of field effect semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5415682A true JPS5415682A (en) | 1979-02-05 |
Family
ID=13742816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8131077A Pending JPS5415682A (en) | 1977-07-06 | 1977-07-06 | Manufacture of field effect semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5415682A (en) |
-
1977
- 1977-07-06 JP JP8131077A patent/JPS5415682A/en active Pending
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