JPS54156442A - Data write-in method ror rewritable non-volatile semiconductor memory device - Google Patents

Data write-in method ror rewritable non-volatile semiconductor memory device

Info

Publication number
JPS54156442A
JPS54156442A JP6513878A JP6513878A JPS54156442A JP S54156442 A JPS54156442 A JP S54156442A JP 6513878 A JP6513878 A JP 6513878A JP 6513878 A JP6513878 A JP 6513878A JP S54156442 A JPS54156442 A JP S54156442A
Authority
JP
Japan
Prior art keywords
write
data
written
address
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6513878A
Other languages
Japanese (ja)
Inventor
Hiroshi Nozawa
Ritsuko Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6513878A priority Critical patent/JPS54156442A/en
Publication of JPS54156442A publication Critical patent/JPS54156442A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To decrease the write-in time, by comparing the data to be written in the rewritable non-volatile semiconductor memory EPROM with the data already memorized in the address to be written in, and by performing write-in when the both are in disagreement. CONSTITUTION:The write-in progam and data are stored in the microcomputer muCM1. The muCM1 is controlled with the tele-typewriter 2, and between the written- in EPROM 3 and the bus line 4, the address input circuit 5, data input and output circuit 6, and mode selection circuit 7 which selects the readout mode, write-in mode or high impedance state, are provided. In this system, the data write-in is made that the data from EPROM 3 is read out, it is compared with the written in data, the write-in for the address is omitted with branching when in agreement, and write-in is executed only when in disagreement. Further, while sequentially checking whether write-in is correctly made or not, the operation is repeated over the entire address. Thus, the write-in time can remarkably be reduced.
JP6513878A 1978-05-31 1978-05-31 Data write-in method ror rewritable non-volatile semiconductor memory device Pending JPS54156442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6513878A JPS54156442A (en) 1978-05-31 1978-05-31 Data write-in method ror rewritable non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6513878A JPS54156442A (en) 1978-05-31 1978-05-31 Data write-in method ror rewritable non-volatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS54156442A true JPS54156442A (en) 1979-12-10

Family

ID=13278218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6513878A Pending JPS54156442A (en) 1978-05-31 1978-05-31 Data write-in method ror rewritable non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS54156442A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151697A (en) * 1984-08-21 1986-03-14 Meidensha Electric Mfg Co Ltd Data storing in nonvolatile memory
JPS61107487A (en) * 1984-10-30 1986-05-26 Toppan Printing Co Ltd Ic card
JPS61250750A (en) * 1985-04-30 1986-11-07 Fujitsu Ltd Method for memory write
JP2003006050A (en) * 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd Semiconductor device
JP2007279884A (en) * 2006-04-04 2007-10-25 Toshiba Mitsubishi-Electric Industrial System Corp Access system for shared memory
JP2011134389A (en) * 2009-12-24 2011-07-07 Samsung Electronics Co Ltd Control device for nonvolatile memory and method of operating control device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151697A (en) * 1984-08-21 1986-03-14 Meidensha Electric Mfg Co Ltd Data storing in nonvolatile memory
JPS61107487A (en) * 1984-10-30 1986-05-26 Toppan Printing Co Ltd Ic card
JPS61250750A (en) * 1985-04-30 1986-11-07 Fujitsu Ltd Method for memory write
JP2003006050A (en) * 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd Semiconductor device
JP4663162B2 (en) * 2001-06-25 2011-03-30 パナソニック株式会社 Semiconductor device
JP2007279884A (en) * 2006-04-04 2007-10-25 Toshiba Mitsubishi-Electric Industrial System Corp Access system for shared memory
JP2011134389A (en) * 2009-12-24 2011-07-07 Samsung Electronics Co Ltd Control device for nonvolatile memory and method of operating control device

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