JPS54152951A - Detection circuit - Google Patents

Detection circuit

Info

Publication number
JPS54152951A
JPS54152951A JP6109178A JP6109178A JPS54152951A JP S54152951 A JPS54152951 A JP S54152951A JP 6109178 A JP6109178 A JP 6109178A JP 6109178 A JP6109178 A JP 6109178A JP S54152951 A JPS54152951 A JP S54152951A
Authority
JP
Japan
Prior art keywords
circuit
diode
zener
resistance
trq
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6109178A
Other languages
Japanese (ja)
Inventor
Hisayoshi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6109178A priority Critical patent/JPS54152951A/en
Publication of JPS54152951A publication Critical patent/JPS54152951A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To obtain a detection circuit with a low distortion rate, by providing a unidirectional element which makes use of Zener characteristics at pn junction, and a biasing method for this element in addition to a time-constant circuit at the output side of this element.
CONSTITUTION: As a unidirectional element, Zener diode DZ1 is used and at its output side, the time-constant circuit of resistance R1 and capacitor C1 connected in parallel is provided as a smoothing circuit so as to constitute the detection circuit. At the input side, the emitter follower circuit is provided which consists of transistor TrQ and resistance R5. To the base of TrQ, input signal (ein) to be detected is applied via capacitor C2. The voltage divider circuit is provided which consists of resistances R2 to R4 for developing the bias voltage of diode DZ1 and resistance R4 is adjusted so that the base coltage of TrQ will become equal to the constant base-emitter voltage of Zener voltage VZ1+Q of diode DZ1. Since operation impedance characteristics of the Zener diode are excellently linear as shown in the figure, output distortion lessens and the distortion ratio never lowers even if a smallamplitude input is supplied.
COPYRIGHT: (C)1979,JPO&Japio
JP6109178A 1978-05-24 1978-05-24 Detection circuit Pending JPS54152951A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6109178A JPS54152951A (en) 1978-05-24 1978-05-24 Detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6109178A JPS54152951A (en) 1978-05-24 1978-05-24 Detection circuit

Publications (1)

Publication Number Publication Date
JPS54152951A true JPS54152951A (en) 1979-12-01

Family

ID=13161056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6109178A Pending JPS54152951A (en) 1978-05-24 1978-05-24 Detection circuit

Country Status (1)

Country Link
JP (1) JPS54152951A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04207609A (en) * 1990-11-30 1992-07-29 Nec Corp Detection circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04207609A (en) * 1990-11-30 1992-07-29 Nec Corp Detection circuit

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