JPS54152866A - Sealing cut method for semiconductor device - Google Patents

Sealing cut method for semiconductor device

Info

Publication number
JPS54152866A
JPS54152866A JP6095878A JP6095878A JPS54152866A JP S54152866 A JPS54152866 A JP S54152866A JP 6095878 A JP6095878 A JP 6095878A JP 6095878 A JP6095878 A JP 6095878A JP S54152866 A JPS54152866 A JP S54152866A
Authority
JP
Japan
Prior art keywords
wire
pipe
given
gate
sealing cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6095878A
Other languages
Japanese (ja)
Inventor
Wasaburo Takahashi
Atsushi Takahoshi
Yoichi Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6095878A priority Critical patent/JPS54152866A/en
Publication of JPS54152866A publication Critical patent/JPS54152866A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To prevent occurrence of the slow leak by drawing out the lead wire to outside from the semiconductor element sealed within the insulated container through the pipe and then giving the sealing cut to the pipe and lead wire after the diameter reduction is given through the pinch welding.
CONSTITUTION: Semiconductor element 1 is stuck onto basement boad 2 made of Cu and then enclosed by insulated container 3, and gate wire 4 provided to element 1 is made to pierce through gate pipe 5 and then drawn outside conatiner 3 and to be connected to gate terminal wire 7. In this case, sealing cut part 6 is formed in the middle of wire 7 to prevent the leak of the inactive gas enclosed into the container. At the same time, cathode terminal wire 8 provided to element 1 is also led outside container 3. In such constitution, part 6 is formed in the following method: Al wire 12 (gate wire) is made to pass through Ni pipe 11 as shown in the diagram; the diameter reduction is given to both pipe 11 and wire 12 by means of pinch welding electrode 16; wire 12 protruded from the pinch welding part is cut off: pinch welding 17 is given again; and the sealing cut is given to pipe 11 to be welded.
COPYRIGHT: (C)1979,JPO&Japio
JP6095878A 1978-05-24 1978-05-24 Sealing cut method for semiconductor device Pending JPS54152866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6095878A JPS54152866A (en) 1978-05-24 1978-05-24 Sealing cut method for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6095878A JPS54152866A (en) 1978-05-24 1978-05-24 Sealing cut method for semiconductor device

Publications (1)

Publication Number Publication Date
JPS54152866A true JPS54152866A (en) 1979-12-01

Family

ID=13157409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6095878A Pending JPS54152866A (en) 1978-05-24 1978-05-24 Sealing cut method for semiconductor device

Country Status (1)

Country Link
JP (1) JPS54152866A (en)

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