JPS5529156A - Cryostat - Google Patents

Cryostat

Info

Publication number
JPS5529156A
JPS5529156A JP10252878A JP10252878A JPS5529156A JP S5529156 A JPS5529156 A JP S5529156A JP 10252878 A JP10252878 A JP 10252878A JP 10252878 A JP10252878 A JP 10252878A JP S5529156 A JPS5529156 A JP S5529156A
Authority
JP
Japan
Prior art keywords
container
liquid
receiving
cap
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10252878A
Other languages
Japanese (ja)
Inventor
Susumu Mitsune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10252878A priority Critical patent/JPS5529156A/en
Publication of JPS5529156A publication Critical patent/JPS5529156A/en
Pending legal-status Critical Current

Links

Landscapes

  • Containers, Films, And Cooling For Superconductive Devices (AREA)

Abstract

PURPOSE: To envelop the vicinity of a lead having a room temperature in the N2 gas having a high dielectric breakdown strength by fitting an N2 container for receiving the liquid N2 utilizing a cap of a container for receiving the liquid He while hanging it down and by inserting a power lead passing through it.
CONSTITUTION: To form the container 18 for receiving the liquid N2 by hanging it down on the undersurface of the insulating cap 15 of the container 11 for receiving the liquid He, and to receive the liquid N2 therein. Next, to fit the power leads 14 on both ends of the superconductive coil 13 dipped in the bottom of the container 11 while passing through the bottom of the cap 15 and the container 18 respectively. By doing so, the lead 14 having an almost room temperature near the cap 15 will be enveloped by N2 gas having a strong dielectric brakdown strength without contacting He gas having a weak dielectric breakdown strength. Consequently the cryostat having a strong dielectric breakdown strength against high tention can be provided.
COPYRIGHT: (C)1980,JPO&Japio
JP10252878A 1978-08-23 1978-08-23 Cryostat Pending JPS5529156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10252878A JPS5529156A (en) 1978-08-23 1978-08-23 Cryostat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10252878A JPS5529156A (en) 1978-08-23 1978-08-23 Cryostat

Publications (1)

Publication Number Publication Date
JPS5529156A true JPS5529156A (en) 1980-03-01

Family

ID=14329807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10252878A Pending JPS5529156A (en) 1978-08-23 1978-08-23 Cryostat

Country Status (1)

Country Link
JP (1) JPS5529156A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989260U (en) * 1982-12-07 1984-06-16 オリンパス光学工業株式会社 ultrasound microscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989260U (en) * 1982-12-07 1984-06-16 オリンパス光学工業株式会社 ultrasound microscope

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