JPS54147791A - Semiconductor pick up unit - Google Patents

Semiconductor pick up unit

Info

Publication number
JPS54147791A
JPS54147791A JP5627478A JP5627478A JPS54147791A JP S54147791 A JPS54147791 A JP S54147791A JP 5627478 A JP5627478 A JP 5627478A JP 5627478 A JP5627478 A JP 5627478A JP S54147791 A JPS54147791 A JP S54147791A
Authority
JP
Japan
Prior art keywords
charge
section
transfer
producing
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5627478A
Other languages
Japanese (ja)
Other versions
JPS5812745B2 (en
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53056274A priority Critical patent/JPS5812745B2/en
Publication of JPS54147791A publication Critical patent/JPS54147791A/en
Publication of JPS5812745B2 publication Critical patent/JPS5812745B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To obtain correct digital video signal, by providing the first charge generation section producing the charge proportional to the amount of incident light and the second charge generation section producing the comparison charge sampled based on the amount of incident light, and the comparator comparing those, on the same semiconductor substrate. CONSTITUTION:On the same semiconductor substrate, the photo electric conversion section 1, a pair of charge transfer section and transfer open and close electrodes 2, 3, 4 and 5, charge production section 6, charge contact part 7, and digital comparator 8 are respectively formed. Whith this constitution, the conversion section 1 producing the signal charge corresponding to the light image emitted consists of a plurality of photo sensing elements 11a to 11b and 12a to 12h, and the transfer sections 2 and 3 are made to meandering shape transfer channel type, and at one end of the trandfer section 3, the charge production section 6 is formed. Further, the signal charge is added acoording to the transfer operation, it is fed to the digital comparator 8, where the signal charge and the comparison charge are compared, and correct digital video signal can be outputted.
JP53056274A 1978-05-11 1978-05-11 semiconductor imaging device Expired JPS5812745B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53056274A JPS5812745B2 (en) 1978-05-11 1978-05-11 semiconductor imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53056274A JPS5812745B2 (en) 1978-05-11 1978-05-11 semiconductor imaging device

Publications (2)

Publication Number Publication Date
JPS54147791A true JPS54147791A (en) 1979-11-19
JPS5812745B2 JPS5812745B2 (en) 1983-03-10

Family

ID=13022496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53056274A Expired JPS5812745B2 (en) 1978-05-11 1978-05-11 semiconductor imaging device

Country Status (1)

Country Link
JP (1) JPS5812745B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206515A (en) * 1982-05-25 1983-12-01 Fujisawa Pharmaceut Co Ltd Hard capsule preparation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206515A (en) * 1982-05-25 1983-12-01 Fujisawa Pharmaceut Co Ltd Hard capsule preparation
JPH0420891B2 (en) * 1982-05-25 1992-04-07 Fujisawa Pharmaceutical Co

Also Published As

Publication number Publication date
JPS5812745B2 (en) 1983-03-10

Similar Documents

Publication Publication Date Title
JPS57164582A (en) Optoelectric transducer
JPS5324789A (en) Production of semiconductor device
JPS54147791A (en) Semiconductor pick up unit
JPS54114922A (en) Two dimentional pick up element and its drive
JPS57181176A (en) High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor
JPS56138970A (en) Amorphous photoelectric converting element and manufacture thereof
JPS5341192A (en) Photoelectric conversion element
JPS57173969A (en) Solid state image pickup device
JPS534417A (en) Solid state pick up unit
JPS55104176A (en) Solidstate pick up unit
JPS5378111A (en) Charge transfer type pick up unit
JPS6415969A (en) Solid-state image sensing device and manufacture thereof
JPS56142682A (en) Charge coupled device
JPS5468107A (en) Pick up unit
JPS5282088A (en) Semiconductor photoelectric converting element
JPS5415686A (en) Photoelectric converting device
JPS5575378A (en) Thin film type pickup element
JPS52151583A (en) Production of photoelectric conversion target
JPS5360195A (en) Photoelectric transducer
JPS5360112A (en) Solid state photoelectric conversion device
JPS56138966A (en) Photoelectric converter
JPS5258391A (en) Piezo electric element
JPS5390A (en) Composite photoelectric conversion element
JPS5377482A (en) Solar battery
JPS57128959A (en) Solid state image pickup element