JPS54140882A - Charge input device - Google Patents

Charge input device

Info

Publication number
JPS54140882A
JPS54140882A JP4900378A JP4900378A JPS54140882A JP S54140882 A JPS54140882 A JP S54140882A JP 4900378 A JP4900378 A JP 4900378A JP 4900378 A JP4900378 A JP 4900378A JP S54140882 A JPS54140882 A JP S54140882A
Authority
JP
Japan
Prior art keywords
gate electrode
voltage
charge
resistance
coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4900378A
Other languages
Japanese (ja)
Other versions
JPS5726426B2 (en
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4900378A priority Critical patent/JPS54140882A/en
Publication of JPS54140882A publication Critical patent/JPS54140882A/en
Publication of JPS5726426B2 publication Critical patent/JPS5726426B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To change input characteristics by changing a coefficient voltage applied to a high-resistance gate electrode, by providing input parts for two systems with the double gate structure including the high-resistance gate electrode. CONSTITUTION:Sources S1 and S2 are applied with strobe pulse STR. The 1st input part consists of signal gate electrode GS, high-resistance gate electrode G1, and output gate electrode G0. Gate electrode GS is applied with signal voltage Vs superposed upon a DC voltage, both the terminals of the high-resistance gate electrode are applied with coefficient voltages V1 and V2 superposed upon the DC voltage, and charge flowing in from source S1 is accumulated in the depletion layer under the gate electrode. Once output gate electrode G0 is applied with a voltage of V3, charge equivalent to voltage V3 or VS is accumulated under gate electrode GST. As for the 2nd input part, charge proportional to V4 or V5 is accumulated under GST. The charge extracted to the outside varies continuously with coefficient voltage V2.
JP4900378A 1978-04-24 1978-04-24 Charge input device Granted JPS54140882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4900378A JPS54140882A (en) 1978-04-24 1978-04-24 Charge input device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4900378A JPS54140882A (en) 1978-04-24 1978-04-24 Charge input device

Publications (2)

Publication Number Publication Date
JPS54140882A true JPS54140882A (en) 1979-11-01
JPS5726426B2 JPS5726426B2 (en) 1982-06-04

Family

ID=12818995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4900378A Granted JPS54140882A (en) 1978-04-24 1978-04-24 Charge input device

Country Status (1)

Country Link
JP (1) JPS54140882A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536999A (en) * 1978-08-31 1980-03-14 Siemens Ag Input stage of charge transfer device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5536999A (en) * 1978-08-31 1980-03-14 Siemens Ag Input stage of charge transfer device
JPH0127595B2 (en) * 1978-08-31 1989-05-30 Siemens Ag

Also Published As

Publication number Publication date
JPS5726426B2 (en) 1982-06-04

Similar Documents

Publication Publication Date Title
NO159509C (en) DIRECTOR EQUIPMENT WITH FILTERED OUTPUT VOLTAGE.
BE791943A (en) VOLTAGE AND / OR CURRENT REGULATOR
IT1075099B (en) NON-LINEAR CONTINUOUS VOLTAGE AMPLIFIER FOR MEASUREMENT PURPOSES
JPS54140882A (en) Charge input device
JPS5797361A (en) Voltage step-down circuit
GB1375556A (en)
JPS55155253A (en) Output compensation circuit for bridge type measuring apparatus
SU409299A1 (en) ELECTROCHEMICAL ACTIVE ELEMENT
JPS5442166A (en) Pressure transmitter
SU955111A1 (en) Function converter
JPS56117394A (en) Two phase dynamic shift register
JPS5298548A (en) Analog display device
JPS5582462A (en) Both polarity charge input unit
JPS51126011A (en) Horizontal output trans
JPS5527611A (en) Circuit to detect channel potential of charge transfer element
Paterson An investigation of self-esteem and related variables of educable mentally handicapped students
JPS54121068A (en) Measuring method for semiconductor device
JPS525253A (en) Mis output circuit
JPS6433967A (en) Input mechanism of charge transfer device
JPS56157569A (en) Logarithmic amplifier
JPS54110759A (en) Transversal filter
JPS51130815A (en) Voltage balancing device
JPS5274895A (en) Electrode material for thick film varistor
JPS55138610A (en) Simple type analog meter
JPS53136975A (en) Charge transfer device