JPS54140882A - Charge input device - Google Patents
Charge input deviceInfo
- Publication number
- JPS54140882A JPS54140882A JP4900378A JP4900378A JPS54140882A JP S54140882 A JPS54140882 A JP S54140882A JP 4900378 A JP4900378 A JP 4900378A JP 4900378 A JP4900378 A JP 4900378A JP S54140882 A JPS54140882 A JP S54140882A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- voltage
- charge
- resistance
- coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Filters That Use Time-Delay Elements (AREA)
- Networks Using Active Elements (AREA)
Abstract
PURPOSE:To change input characteristics by changing a coefficient voltage applied to a high-resistance gate electrode, by providing input parts for two systems with the double gate structure including the high-resistance gate electrode. CONSTITUTION:Sources S1 and S2 are applied with strobe pulse STR. The 1st input part consists of signal gate electrode GS, high-resistance gate electrode G1, and output gate electrode G0. Gate electrode GS is applied with signal voltage Vs superposed upon a DC voltage, both the terminals of the high-resistance gate electrode are applied with coefficient voltages V1 and V2 superposed upon the DC voltage, and charge flowing in from source S1 is accumulated in the depletion layer under the gate electrode. Once output gate electrode G0 is applied with a voltage of V3, charge equivalent to voltage V3 or VS is accumulated under gate electrode GST. As for the 2nd input part, charge proportional to V4 or V5 is accumulated under GST. The charge extracted to the outside varies continuously with coefficient voltage V2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4900378A JPS54140882A (en) | 1978-04-24 | 1978-04-24 | Charge input device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4900378A JPS54140882A (en) | 1978-04-24 | 1978-04-24 | Charge input device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54140882A true JPS54140882A (en) | 1979-11-01 |
JPS5726426B2 JPS5726426B2 (en) | 1982-06-04 |
Family
ID=12818995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4900378A Granted JPS54140882A (en) | 1978-04-24 | 1978-04-24 | Charge input device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54140882A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5536999A (en) * | 1978-08-31 | 1980-03-14 | Siemens Ag | Input stage of charge transfer device |
-
1978
- 1978-04-24 JP JP4900378A patent/JPS54140882A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5536999A (en) * | 1978-08-31 | 1980-03-14 | Siemens Ag | Input stage of charge transfer device |
JPH0127595B2 (en) * | 1978-08-31 | 1989-05-30 | Siemens Ag |
Also Published As
Publication number | Publication date |
---|---|
JPS5726426B2 (en) | 1982-06-04 |
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