JPS54126475A - Electron beam exposure unit - Google Patents

Electron beam exposure unit

Info

Publication number
JPS54126475A
JPS54126475A JP3361078A JP3361078A JPS54126475A JP S54126475 A JPS54126475 A JP S54126475A JP 3361078 A JP3361078 A JP 3361078A JP 3361078 A JP3361078 A JP 3361078A JP S54126475 A JPS54126475 A JP S54126475A
Authority
JP
Japan
Prior art keywords
electron beam
slit
luminance
boride
luminance part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3361078A
Other languages
Japanese (ja)
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3361078A priority Critical patent/JPS54126475A/en
Publication of JPS54126475A publication Critical patent/JPS54126475A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To make a precise variable square pattern exposure possible by using lanthanum hexa-boride as an electron beam source and taking out a high-luminance part included in this lanthanum hexa-boride by using a square slit. CONSTITUTION:Electron beam source 12 having grid 13 and anode 14 is constituted by lanthanum hexa-boride, namely, LaB6. By this constitution, the luminance distribution of LaB6 near anode 14 indicates 6.9X10<5>A/cm<2> str in high-luminance part a and 1.3X10<5>A/cm<2> str in low-luminance part b as shown in the figure. Therefore, high-luminance part a and low-luminance part b are used for the pattern edge and the pattern inside respectively to perform exposure. That is, electron beam 15 is deflected by deflecting plate 24 and is first cut by slit 25a of the first slit plate 25 and is next cut by slit 27a of the second slit plate 27 again, and high-luminance components are used for exposure of the edge of sample 22. Meanwhile, the pattern inside is exposed by using part b.
JP3361078A 1978-03-25 1978-03-25 Electron beam exposure unit Pending JPS54126475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3361078A JPS54126475A (en) 1978-03-25 1978-03-25 Electron beam exposure unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3361078A JPS54126475A (en) 1978-03-25 1978-03-25 Electron beam exposure unit

Publications (1)

Publication Number Publication Date
JPS54126475A true JPS54126475A (en) 1979-10-01

Family

ID=12391221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3361078A Pending JPS54126475A (en) 1978-03-25 1978-03-25 Electron beam exposure unit

Country Status (1)

Country Link
JP (1) JPS54126475A (en)

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