JPS54109360A - Transistor switch circuit - Google Patents

Transistor switch circuit

Info

Publication number
JPS54109360A
JPS54109360A JP1697778A JP1697778A JPS54109360A JP S54109360 A JPS54109360 A JP S54109360A JP 1697778 A JP1697778 A JP 1697778A JP 1697778 A JP1697778 A JP 1697778A JP S54109360 A JPS54109360 A JP S54109360A
Authority
JP
Japan
Prior art keywords
base
circuit
collector
pnp
npn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1697778A
Other languages
Japanese (ja)
Inventor
Mitsuyoshi Tsuboike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1697778A priority Critical patent/JPS54109360A/en
Publication of JPS54109360A publication Critical patent/JPS54109360A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To constitute a high-reliability and high-efficiency circuit which operates in case of a load of a large current, by using a high-reliability transistor without using a SCR, etc., in a circuit which controls the ON-OFF operation of an input power supply by an independent pulse signal. CONSTITUTION:This circuit is provided with 1st PNP or NPN transisor 4 with ON pulse generator 6 connected to its base, and NPN or PNP Tr3, equivalent to Tr4, with OFF pulse generator 7 connected to its base. Further, current limiting resistance 8 is connected between the collector of Tr4 and the base of Tr3, and positive feedback resistance 5 is between the collector of Tr3 and the base of Tr4. In addition current-branching diode 9 is connected to the collector of Tr3 to constitute a switching circuit, and load 2 connected to DC input power supply 1 is connected to the emitter of Tr3.
JP1697778A 1978-02-15 1978-02-15 Transistor switch circuit Pending JPS54109360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1697778A JPS54109360A (en) 1978-02-15 1978-02-15 Transistor switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1697778A JPS54109360A (en) 1978-02-15 1978-02-15 Transistor switch circuit

Publications (1)

Publication Number Publication Date
JPS54109360A true JPS54109360A (en) 1979-08-27

Family

ID=11931116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1697778A Pending JPS54109360A (en) 1978-02-15 1978-02-15 Transistor switch circuit

Country Status (1)

Country Link
JP (1) JPS54109360A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237390A (en) * 1988-07-27 1990-02-07 Shimadzu Corp Self-holding type switch matrix
WO1995005706A1 (en) * 1992-01-23 1995-02-23 Kenmei Kukihara High off-gate gain gto thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0237390A (en) * 1988-07-27 1990-02-07 Shimadzu Corp Self-holding type switch matrix
WO1995005706A1 (en) * 1992-01-23 1995-02-23 Kenmei Kukihara High off-gate gain gto thyristor

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