JPS54108581A - Electron-beam exposure device - Google Patents
Electron-beam exposure deviceInfo
- Publication number
- JPS54108581A JPS54108581A JP1571078A JP1571078A JPS54108581A JP S54108581 A JPS54108581 A JP S54108581A JP 1571078 A JP1571078 A JP 1571078A JP 1571078 A JP1571078 A JP 1571078A JP S54108581 A JPS54108581 A JP S54108581A
- Authority
- JP
- Japan
- Prior art keywords
- deflection
- electron beams
- section
- electron
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To obtain electron beams of the section desirable in size invariably, by correcting a length signal of side Y corresponding to the variation of the length signal of side X of electron beams of the reactangular section. CONSTITUTION:By the command of computer 4, register 5 attain D/A conversion 6 and amplification 7 of a signal to make deflection (dxdy), and gate 14 is opened to reset counter 23. Clock pulse CP18 after being gated 14, counted 15 and D/A-converted 16 is amplified 17 and deflection- scanned 13, so that wire 10 will be irradiated with electron beams at a constant speed. Primary and secondary differential processes 20 and 21 of an electron-beam current decreasing gradually are performed to generate 22 pulses of the pulse width equal to the interval between secondary differential signal peaks and, in consequence, gate 27 is opened to count 23 CPs, so that its discrete value will be stored in comparator 24. Next, when side Y is changed with side X of the beam section kept constant, a deflection component is generated in the X direction with side Y not in parallel to deflection direction (dy). Therefore, CP discrete value 23 at this time is compared 24 with the stored value, the difference is D/A-converted 25 for matrix control 26, and deflection in the X direction is made with the polarity inverted. Consequently, the section of electron beams passing through mask (m2) becomes desirable in size.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1571078A JPS54108581A (en) | 1978-02-13 | 1978-02-13 | Electron-beam exposure device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1571078A JPS54108581A (en) | 1978-02-13 | 1978-02-13 | Electron-beam exposure device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54108581A true JPS54108581A (en) | 1979-08-25 |
JPS5616543B2 JPS5616543B2 (en) | 1981-04-16 |
Family
ID=11896315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1571078A Granted JPS54108581A (en) | 1978-02-13 | 1978-02-13 | Electron-beam exposure device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54108581A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5760841A (en) * | 1980-09-30 | 1982-04-13 | Toshiba Corp | Exposure device for electron beam |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5895370U (en) * | 1981-12-22 | 1983-06-28 | 井関農機株式会社 | Operating device in mobile vehicle |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50105381A (en) * | 1974-01-28 | 1975-08-20 |
-
1978
- 1978-02-13 JP JP1571078A patent/JPS54108581A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50105381A (en) * | 1974-01-28 | 1975-08-20 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5760841A (en) * | 1980-09-30 | 1982-04-13 | Toshiba Corp | Exposure device for electron beam |
Also Published As
Publication number | Publication date |
---|---|
JPS5616543B2 (en) | 1981-04-16 |
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