JPS5374382A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5374382A JPS5374382A JP15107676A JP15107676A JPS5374382A JP S5374382 A JPS5374382 A JP S5374382A JP 15107676 A JP15107676 A JP 15107676A JP 15107676 A JP15107676 A JP 15107676A JP S5374382 A JPS5374382 A JP S5374382A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- electrode
- vicid
- soldering
- adhering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To avoid deterioration of the dielectric strength caused by soldering the lead wire by forming an electrode covering the concave area of the Si substrate which is formed using SiO2 film as a mask and adhering a vicid material on the side surface of the electrode.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15107676A JPS5374382A (en) | 1976-12-15 | 1976-12-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15107676A JPS5374382A (en) | 1976-12-15 | 1976-12-15 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5374382A true JPS5374382A (en) | 1978-07-01 |
Family
ID=15510776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15107676A Pending JPS5374382A (en) | 1976-12-15 | 1976-12-15 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5374382A (en) |
-
1976
- 1976-12-15 JP JP15107676A patent/JPS5374382A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5425178A (en) | Manufacture for semiconductor device | |
JPS5445570A (en) | Manufacture for semiconductor element | |
JPS5374382A (en) | Semiconductor device | |
JPS534469A (en) | Semiconductor device | |
JPS5380183A (en) | Semiconductor device | |
JPS5267963A (en) | Manufacture of semiconductor unit | |
JPS5289468A (en) | Semiconductor device | |
JPS53141574A (en) | Manufacture of semiconductor device | |
JPS5364467A (en) | Electrode | |
JPS5317274A (en) | Electrode structure of semiconductor element | |
JPS547867A (en) | Manufacture for semiconductor device | |
JPS5422171A (en) | Manufacture of semiconductor device | |
JPS546775A (en) | Semiconductor device featuring stepped electrode structure | |
JPS5368970A (en) | Solder electrode structure | |
JPS53118993A (en) | Manufacture for semiconductor device | |
JPS52141566A (en) | Semiconductor device and its manufacture | |
JPS52144276A (en) | Semiconductor device | |
JPS53124065A (en) | Manufacture of semiconductor device | |
JPS52143767A (en) | Production of semiconductor device | |
JPS53139476A (en) | Manufacture of semiconductor device | |
JPS5338978A (en) | Manufacture of semiconductor device | |
JPS5276874A (en) | Production of semiconductor device | |
JPS5351978A (en) | Manufacture of semiconductor device | |
JPS5297679A (en) | Semiconductor rectifying element | |
JPS5377185A (en) | Electrode formation method of semiconductor device |