JPS5368587A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS5368587A
JPS5368587A JP14334576A JP14334576A JPS5368587A JP S5368587 A JPS5368587 A JP S5368587A JP 14334576 A JP14334576 A JP 14334576A JP 14334576 A JP14334576 A JP 14334576A JP S5368587 A JPS5368587 A JP S5368587A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
polycrystalline
impurity
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14334576A
Other languages
Japanese (ja)
Inventor
Ryoichi Hori
Kiyoo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14334576A priority Critical patent/JPS5368587A/en
Publication of JPS5368587A publication Critical patent/JPS5368587A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To form channel length and charge storage capacities with good accuracy and reduce the occupying area of a memory cell by forming gate electrodes with polycrystalline Si containing an impurity and channel regions and diffused regions provided therein with an ion implantation method.
JP14334576A 1976-12-01 1976-12-01 Semiconductor memory cell Pending JPS5368587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14334576A JPS5368587A (en) 1976-12-01 1976-12-01 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14334576A JPS5368587A (en) 1976-12-01 1976-12-01 Semiconductor memory cell

Publications (1)

Publication Number Publication Date
JPS5368587A true JPS5368587A (en) 1978-06-19

Family

ID=15336617

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14334576A Pending JPS5368587A (en) 1976-12-01 1976-12-01 Semiconductor memory cell

Country Status (1)

Country Link
JP (1) JPS5368587A (en)

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