JPS52111392A - Semi-conductor memory - Google Patents

Semi-conductor memory

Info

Publication number
JPS52111392A
JPS52111392A JP2852276A JP2852276A JPS52111392A JP S52111392 A JPS52111392 A JP S52111392A JP 2852276 A JP2852276 A JP 2852276A JP 2852276 A JP2852276 A JP 2852276A JP S52111392 A JPS52111392 A JP S52111392A
Authority
JP
Japan
Prior art keywords
semi
conductor memory
memory
accommodative
igfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2852276A
Other languages
Japanese (ja)
Other versions
JPS5635306B2 (en
Inventor
Yasoji Suzuki
Kiyobumi Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2852276A priority Critical patent/JPS52111392A/en
Priority to GB10895/77A priority patent/GB1521955A/en
Priority to US05/777,664 priority patent/US4151610A/en
Priority to DE2711523A priority patent/DE2711523C2/en
Publication of JPS52111392A publication Critical patent/JPS52111392A/en
Publication of JPS5635306B2 publication Critical patent/JPS5635306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To produce a memory device using IGFET satisfactorily accommodative to multi-bit trend by raising junction capacity using well region to reduce the member of elements for a memory cell to one.
JP2852276A 1976-03-16 1976-03-16 Semi-conductor memory Granted JPS52111392A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2852276A JPS52111392A (en) 1976-03-16 1976-03-16 Semi-conductor memory
GB10895/77A GB1521955A (en) 1976-03-16 1977-03-15 Semiconductor memory device
US05/777,664 US4151610A (en) 1976-03-16 1977-03-15 High density semiconductor memory device formed in a well and having more than one capacitor
DE2711523A DE2711523C2 (en) 1976-03-16 1977-03-16 Dynamic semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2852276A JPS52111392A (en) 1976-03-16 1976-03-16 Semi-conductor memory

Publications (2)

Publication Number Publication Date
JPS52111392A true JPS52111392A (en) 1977-09-19
JPS5635306B2 JPS5635306B2 (en) 1981-08-15

Family

ID=12250994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2852276A Granted JPS52111392A (en) 1976-03-16 1976-03-16 Semi-conductor memory

Country Status (1)

Country Link
JP (1) JPS52111392A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018190480A (en) * 2017-05-04 2018-11-29 朝景 湯 Random access memory and associated circuit, method and system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018190480A (en) * 2017-05-04 2018-11-29 朝景 湯 Random access memory and associated circuit, method and system

Also Published As

Publication number Publication date
JPS5635306B2 (en) 1981-08-15

Similar Documents

Publication Publication Date Title
JPS52106280A (en) Semiconductor transistor memory cell
JPS5359384A (en) Nnchannel mos silicon gate ram cell
JPS53108392A (en) Semiconductor device
JPS5252337A (en) Semiconductor memory cell
JPS5419372A (en) Production of semiconductor memory
JPS52111392A (en) Semi-conductor memory
JPS51148385A (en) Semiconductor memory cell
JPS5335337A (en) Tetrode transistor memory logic cell
JPS51147280A (en) Semiconductor device
JPS5278389A (en) Semiconductor memory device
JPS51142932A (en) Semiconductor memory devices
JPS53108737A (en) Memory circuit
JPS5368182A (en) Production of semiconductor memory device
JPS5417681A (en) Manufacture of semiconductor memory device
JPS5238841A (en) Charge pump device and integrated memory cells
JPS5387674A (en) Semiconductor memory device
JPS52155074A (en) Semiconductor memory
JPS531428A (en) Semiconductor memory
JPS5432086A (en) Semiconductor capacity element
JPS5350985A (en) Semiconductor memory device
JPS51134074A (en) Method to manufacture the semiconductor unit
JPS5384432A (en) Semiconductor memory unit
JPS5352325A (en) Mos random access memory
JPS5423338A (en) Mos dynamic memory device
JPS5466088A (en) Semiconductor memory cell