JPS5364482A - Method of implanting carrier to fet device - Google Patents

Method of implanting carrier to fet device

Info

Publication number
JPS5364482A
JPS5364482A JP11697477A JP11697477A JPS5364482A JP S5364482 A JPS5364482 A JP S5364482A JP 11697477 A JP11697477 A JP 11697477A JP 11697477 A JP11697477 A JP 11697477A JP S5364482 A JPS5364482 A JP S5364482A
Authority
JP
Japan
Prior art keywords
fet device
implanting
carrier
implanting carrier
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11697477A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5548459B2 (enFirst
Inventor
Furanshisu Hawaado Roueru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5364482A publication Critical patent/JPS5364482A/ja
Publication of JPS5548459B2 publication Critical patent/JPS5548459B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP11697477A 1976-11-19 1977-09-30 Method of implanting carrier to fet device Granted JPS5364482A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/743,253 US4075653A (en) 1976-11-19 1976-11-19 Method for injecting charge in field effect devices

Publications (2)

Publication Number Publication Date
JPS5364482A true JPS5364482A (en) 1978-06-08
JPS5548459B2 JPS5548459B2 (enFirst) 1980-12-05

Family

ID=24988084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11697477A Granted JPS5364482A (en) 1976-11-19 1977-09-30 Method of implanting carrier to fet device

Country Status (5)

Country Link
US (1) US4075653A (enFirst)
JP (1) JPS5364482A (enFirst)
DE (1) DE2749711A1 (enFirst)
FR (1) FR2371692A1 (enFirst)
GB (1) GB1535019A (enFirst)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100459A (ja) * 1981-12-10 1983-06-15 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓ型半導体装置の特性安定化処理方法
JP2007043124A (ja) * 2005-07-04 2007-02-15 Denso Corp 半導体装置の検査方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6117836A (ja) * 1984-07-04 1986-01-25 Matsushita Electric Ind Co Ltd 電気コンロ
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5598009A (en) * 1994-11-15 1997-01-28 Advanced Micro Devices, Inc. Hot carrier injection test structure and testing technique for statistical evaluation
DE10224956A1 (de) * 2002-06-05 2004-01-08 Infineon Technologies Ag Verfahren zur Einstellung der Einsatzspannung eines Feldeffekttansistors, Feldeffekttransistor sowie integrierte Schaltung
WO2023012893A1 (ja) * 2021-08-03 2023-02-09 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4844585B1 (enFirst) * 1969-04-12 1973-12-25
NL7208026A (enFirst) * 1972-06-13 1973-12-17

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100459A (ja) * 1981-12-10 1983-06-15 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓ型半導体装置の特性安定化処理方法
JP2007043124A (ja) * 2005-07-04 2007-02-15 Denso Corp 半導体装置の検査方法

Also Published As

Publication number Publication date
US4075653A (en) 1978-02-21
GB1535019A (en) 1978-12-06
JPS5548459B2 (enFirst) 1980-12-05
FR2371692B1 (enFirst) 1982-04-09
FR2371692A1 (fr) 1978-06-16
DE2749711A1 (de) 1978-05-24

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