JPS535978A - Method of forming enhancement fet and depletion fet - Google Patents
Method of forming enhancement fet and depletion fetInfo
- Publication number
- JPS535978A JPS535978A JP7565077A JP7565077A JPS535978A JP S535978 A JPS535978 A JP S535978A JP 7565077 A JP7565077 A JP 7565077A JP 7565077 A JP7565077 A JP 7565077A JP S535978 A JPS535978 A JP S535978A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- depletion
- forming enhancement
- forming
- enhancement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/702,247 US4085498A (en) | 1976-02-09 | 1976-07-02 | Fabrication of integrated circuits containing enhancement-mode FETs and depletion-mode FETs with two layers of polycrystalline silicon utilizing five basic pattern delineating steps |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS535978A true JPS535978A (en) | 1978-01-19 |
JPS5525515B2 JPS5525515B2 (de) | 1980-07-07 |
Family
ID=24820425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7565077A Granted JPS535978A (en) | 1976-07-02 | 1977-06-27 | Method of forming enhancement fet and depletion fet |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS535978A (de) |
CA (1) | CA1088676A (de) |
DE (1) | DE2723254A1 (de) |
GB (1) | GB1522294A (de) |
IT (1) | IT1113770B (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5359384A (en) * | 1976-09-13 | 1978-05-29 | Texas Instruments Inc | Nnchannel mos silicon gate ram cell |
CN118398494A (zh) * | 2024-06-28 | 2024-07-26 | 合肥欧益睿芯科技有限公司 | E/D集成的GaAs HEMT器件及其制造方法、电路和电子设备 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2199694A (en) * | 1986-12-23 | 1988-07-13 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
-
1977
- 1977-05-24 DE DE19772723254 patent/DE2723254A1/de active Granted
- 1977-06-15 GB GB25028/77A patent/GB1522294A/en not_active Expired
- 1977-06-23 IT IT24970/77A patent/IT1113770B/it active
- 1977-06-27 JP JP7565077A patent/JPS535978A/ja active Granted
- 1977-06-30 CA CA281,849A patent/CA1088676A/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5359384A (en) * | 1976-09-13 | 1978-05-29 | Texas Instruments Inc | Nnchannel mos silicon gate ram cell |
JPS6050065B2 (ja) * | 1976-09-13 | 1985-11-06 | テキサス・インスツルメンツ・インコ−ポレイテツド | メモリセル |
JPS6150361A (ja) * | 1976-09-13 | 1986-03-12 | テキサス インスツルメンツ インコ−ポレイテツド | メモリセル |
CN118398494A (zh) * | 2024-06-28 | 2024-07-26 | 合肥欧益睿芯科技有限公司 | E/D集成的GaAs HEMT器件及其制造方法、电路和电子设备 |
Also Published As
Publication number | Publication date |
---|---|
JPS5525515B2 (de) | 1980-07-07 |
DE2723254A1 (de) | 1978-01-12 |
DE2723254C2 (de) | 1987-10-08 |
IT1113770B (it) | 1986-01-20 |
CA1088676A (en) | 1980-10-28 |
GB1522294A (en) | 1978-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2022318B (en) | Schottky device and method of manufacture | |
JPS52139389A (en) | Selffmatching fet transistor and method of producing same | |
JPS5279730A (en) | Method of fabricating document and device therefor | |
JPS52103988A (en) | Method and device for taking curved sectional plane of xxray | |
JPS5286077A (en) | Supercompact device and method of manufacture thereof | |
JPS51112202A (en) | Gasket and method of fabricating same | |
JPS5613773A (en) | Fet and method of manufacturing same | |
JPS52120498A (en) | Method of and device for fastening assembled body | |
JPS53134378A (en) | Semiconductor and method of forming same | |
JPS54152872A (en) | Metal semiconductor fet transistor and method of fabricating same | |
JPS5247801A (en) | Separator and method of its application | |
JPS5617074A (en) | Field effect transistor and method of manufacturing same | |
JPS5377473A (en) | Transistor and method of producing same | |
JPS5294206A (en) | Photooengraving plate and method of making same | |
JPS52103280A (en) | Rippable stopper and method of making same | |
JPS5384495A (en) | Semiconductor electrode and method of forming same | |
JPS5491187A (en) | Semiconductor and method of fabricating same | |
JPS52148626A (en) | Antiistendh coposition and method of reducing stench | |
JPS5272530A (en) | Multiinozzle wefer and method of fabricating same | |
JPS5546596A (en) | Field effect transistor and method of fabricating same | |
GB2044533B (en) | Semiconductor device and method of manufactguring same | |
JPS5373584A (en) | Composition of substance and method | |
JPS531477A (en) | Fet transistor and method of producing same | |
JPS5336186A (en) | Nnchannel fet transistor and method of producing same | |
JPS533928A (en) | Platingginhibiting agent and method of using same |