JPS5357775A - Semiconductor ingegrated circuit device - Google Patents
Semiconductor ingegrated circuit deviceInfo
- Publication number
- JPS5357775A JPS5357775A JP13280376A JP13280376A JPS5357775A JP S5357775 A JPS5357775 A JP S5357775A JP 13280376 A JP13280376 A JP 13280376A JP 13280376 A JP13280376 A JP 13280376A JP S5357775 A JPS5357775 A JP S5357775A
- Authority
- JP
- Japan
- Prior art keywords
- ingegrated
- semiconductor
- circuit device
- anode
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13280376A JPS5357775A (en) | 1976-11-04 | 1976-11-04 | Semiconductor ingegrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13280376A JPS5357775A (en) | 1976-11-04 | 1976-11-04 | Semiconductor ingegrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5357775A true JPS5357775A (en) | 1978-05-25 |
Family
ID=15089929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13280376A Pending JPS5357775A (en) | 1976-11-04 | 1976-11-04 | Semiconductor ingegrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5357775A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0119260A1 (en) * | 1982-09-20 | 1984-09-26 | Semi Processes Inc. | Cmos integrated circuit with guard bands for latch-up protection |
JPS60123053A (ja) * | 1983-12-07 | 1985-07-01 | Hitachi Micro Comput Eng Ltd | 半導体装置 |
JPS627148A (ja) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | 相補型半導体装置及びその製造方法 |
-
1976
- 1976-11-04 JP JP13280376A patent/JPS5357775A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0119260A1 (en) * | 1982-09-20 | 1984-09-26 | Semi Processes Inc. | Cmos integrated circuit with guard bands for latch-up protection |
JPS60123053A (ja) * | 1983-12-07 | 1985-07-01 | Hitachi Micro Comput Eng Ltd | 半導体装置 |
JPH0412627B2 (ja) * | 1983-12-07 | 1992-03-05 | Hitachi Maikon Shisutemu Kk | |
JPS627148A (ja) * | 1985-07-03 | 1987-01-14 | Agency Of Ind Science & Technol | 相補型半導体装置及びその製造方法 |
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