JPS5356979A - Semiconductor switching element - Google Patents

Semiconductor switching element

Info

Publication number
JPS5356979A
JPS5356979A JP12883177A JP12883177A JPS5356979A JP S5356979 A JPS5356979 A JP S5356979A JP 12883177 A JP12883177 A JP 12883177A JP 12883177 A JP12883177 A JP 12883177A JP S5356979 A JPS5356979 A JP S5356979A
Authority
JP
Japan
Prior art keywords
switching element
semiconductor switching
semiconductor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12883177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5649459B2 (nl
Inventor
Henrii Hansu Mauraisu
Sutatsufuaa Shirugeru Aaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5356979A publication Critical patent/JPS5356979A/ja
Publication of JPS5649459B2 publication Critical patent/JPS5649459B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Rectifiers (AREA)
JP12883177A 1976-10-29 1977-10-28 Semiconductor switching element Granted JPS5356979A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73679576A 1976-10-29 1976-10-29

Publications (2)

Publication Number Publication Date
JPS5356979A true JPS5356979A (en) 1978-05-23
JPS5649459B2 JPS5649459B2 (nl) 1981-11-21

Family

ID=24961330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12883177A Granted JPS5356979A (en) 1976-10-29 1977-10-28 Semiconductor switching element

Country Status (13)

Country Link
JP (1) JPS5356979A (nl)
AU (1) AU516308B2 (nl)
BE (1) BE859992A (nl)
BR (1) BR7707015A (nl)
CA (1) CA1104726A (nl)
DE (1) DE2748528A1 (nl)
FR (1) FR2393432A1 (nl)
GB (1) GB1592877A (nl)
HK (1) HK64384A (nl)
IN (1) IN148845B (nl)
PL (1) PL117693B1 (nl)
SE (1) SE7712091L (nl)
ZA (1) ZA775629B (nl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3000804A1 (de) * 1980-01-11 1981-07-16 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Thyristor mit kurzgeschlossenem emitter fuer kurze stromflussdauer
JPS5935689U (ja) * 1982-08-30 1984-03-06 株式会社東芝 冷凍サイクル装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573572A (en) * 1968-09-23 1971-04-06 Int Rectifier Corp Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current
US3731162A (en) * 1969-09-25 1973-05-01 Tokyo Shibaura Electric Co Semiconductor switching device
FR2144581B1 (nl) * 1971-07-06 1976-03-19 Silec Semi Conducteurs
DE2141627C3 (de) * 1971-08-19 1979-06-13 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
DE2210386A1 (de) * 1972-03-03 1973-09-06 Siemens Ag Thyristor
GB1425651A (en) * 1972-04-03 1976-02-18 Motorola Inc Channel firing thyristor
DE2346256C3 (de) * 1973-09-13 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Thyristor
JPS5413959B2 (nl) * 1973-10-17 1979-06-04
JPS5927108B2 (ja) * 1975-02-07 1984-07-03 株式会社日立製作所 半導体制御整流装置

Also Published As

Publication number Publication date
FR2393432B1 (nl) 1983-08-26
ZA775629B (en) 1978-08-30
AU2974177A (en) 1979-04-26
PL117693B1 (en) 1981-08-31
BE859992A (fr) 1978-04-21
IN148845B (nl) 1981-06-27
CA1104726A (en) 1981-07-07
DE2748528A1 (de) 1978-05-03
BR7707015A (pt) 1978-07-18
JPS5649459B2 (nl) 1981-11-21
HK64384A (en) 1984-08-24
AU516308B2 (en) 1981-05-28
SE7712091L (sv) 1978-04-30
PL201799A1 (pl) 1978-05-08
GB1592877A (en) 1981-07-08
FR2393432A1 (fr) 1978-12-29

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