Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP12988876ApriorityCriticalpatent/JPS5354198A/en
Publication of JPS5354198ApublicationCriticalpatent/JPS5354198A/en
PURPOSE: To obtain a bubble domain material of small coercive force with good reproducibility in liquid phase epitaxial growth of a magnetic garnet film from a zinc oxide-boron oxide flux by controlling the ratio of divalent and tetravalent ions.
COPYRIGHT: (C)1978,JPO&Japio
JP12988876A1976-10-271976-10-27Liquid phase epitaxial growing method for garnet thin film
PendingJPS5354198A
(en)