JPS5351983A - Iil semiconductor device and its manufacture - Google Patents
Iil semiconductor device and its manufactureInfo
- Publication number
- JPS5351983A JPS5351983A JP12610076A JP12610076A JPS5351983A JP S5351983 A JPS5351983 A JP S5351983A JP 12610076 A JP12610076 A JP 12610076A JP 12610076 A JP12610076 A JP 12610076A JP S5351983 A JPS5351983 A JP S5351983A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- iil
- iil semiconductor
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To manufacture I<2>l constitution, by making the parasitic capacitance small thru low concentration of n type collector and by picking up the electrode without performing conventional n<+> diffusion from the collector.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12610076A JPS5351983A (en) | 1976-10-22 | 1976-10-22 | Iil semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12610076A JPS5351983A (en) | 1976-10-22 | 1976-10-22 | Iil semiconductor device and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5351983A true JPS5351983A (en) | 1978-05-11 |
Family
ID=14926603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12610076A Pending JPS5351983A (en) | 1976-10-22 | 1976-10-22 | Iil semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5351983A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5543848A (en) * | 1978-09-25 | 1980-03-27 | Hitachi Ltd | Integrated circuit and manufacture thereof |
-
1976
- 1976-10-22 JP JP12610076A patent/JPS5351983A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5543848A (en) * | 1978-09-25 | 1980-03-27 | Hitachi Ltd | Integrated circuit and manufacture thereof |
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