JPS5340077B1 - - Google Patents
Info
- Publication number
- JPS5340077B1 JPS5340077B1 JP5772A JP5772A JPS5340077B1 JP S5340077 B1 JPS5340077 B1 JP S5340077B1 JP 5772 A JP5772 A JP 5772A JP 5772 A JP5772 A JP 5772A JP S5340077 B1 JPS5340077 B1 JP S5340077B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10W74/43—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/06—Gettering
Landscapes
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Light Receiving Elements (AREA)
- Weting (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7100275A NL7100275A (cg-RX-API-DMAC10.html) | 1971-01-08 | 1971-01-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4713870A JPS4713870A (cg-RX-API-DMAC10.html) | 1972-07-21 |
| JPS5340077B1 true JPS5340077B1 (cg-RX-API-DMAC10.html) | 1978-10-25 |
Family
ID=19812221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5772A Pending JPS5340077B1 (cg-RX-API-DMAC10.html) | 1971-01-08 | 1972-01-05 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3811975A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS5340077B1 (cg-RX-API-DMAC10.html) |
| AU (1) | AU3742871A (cg-RX-API-DMAC10.html) |
| CA (1) | CA937496A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2162445C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2121664B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1366991A (cg-RX-API-DMAC10.html) |
| NL (1) | NL7100275A (cg-RX-API-DMAC10.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5010572A (cg-RX-API-DMAC10.html) * | 1973-05-25 | 1975-02-03 | ||
| US3923567A (en) * | 1974-08-09 | 1975-12-02 | Silicon Materials Inc | Method of reclaiming a semiconductor wafer |
| JPS51102556A (cg-RX-API-DMAC10.html) * | 1975-03-07 | 1976-09-10 | Hitachi Ltd | |
| US4040893A (en) * | 1976-04-12 | 1977-08-09 | General Electric Company | Method of selective etching of materials utilizing masks of binary silicate glasses |
| US4125427A (en) * | 1976-08-27 | 1978-11-14 | Ncr Corporation | Method of processing a semiconductor |
| DE3037316C2 (de) * | 1979-10-03 | 1982-12-23 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Verfahren zur Herstellung von Leistungsthyristoren |
| US4388147A (en) * | 1982-08-16 | 1983-06-14 | Intel Corporation | Method for steam leaching phosphorus from phosphosilicate glass during semiconductor fabrication |
| US4525239A (en) * | 1984-04-23 | 1985-06-25 | Hewlett-Packard Company | Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits |
| JPS6124240A (ja) * | 1984-07-13 | 1986-02-01 | Toshiba Corp | 半導体基板 |
| US4589928A (en) * | 1984-08-21 | 1986-05-20 | At&T Bell Laboratories | Method of making semiconductor integrated circuits having backside gettered with phosphorus |
| JPH1140498A (ja) * | 1997-07-22 | 1999-02-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US7410901B2 (en) * | 2006-04-27 | 2008-08-12 | Honeywell International, Inc. | Submicron device fabrication |
| US10276362B2 (en) * | 2016-04-29 | 2019-04-30 | Infineon Technologies Ag | Method for processing a semiconductor region and an electronic device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1209914A (en) * | 1967-03-29 | 1970-10-21 | Marconi Co Ltd | Improvements in or relating to semi-conductor devices |
-
1971
- 1971-01-08 NL NL7100275A patent/NL7100275A/xx unknown
- 1971-12-16 DE DE2162445A patent/DE2162445C3/de not_active Expired
- 1971-12-16 US US00208706A patent/US3811975A/en not_active Expired - Lifetime
- 1971-12-30 AU AU37428/71A patent/AU3742871A/en not_active Expired
-
1972
- 1972-01-05 CA CA131699A patent/CA937496A/en not_active Expired
- 1972-01-05 JP JP5772A patent/JPS5340077B1/ja active Pending
- 1972-01-05 GB GB50972A patent/GB1366991A/en not_active Expired
- 1972-01-07 FR FR7200450A patent/FR2121664B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2121664B1 (cg-RX-API-DMAC10.html) | 1977-09-02 |
| US3811975A (en) | 1974-05-21 |
| AU3742871A (en) | 1973-07-05 |
| NL7100275A (cg-RX-API-DMAC10.html) | 1972-07-11 |
| FR2121664A1 (cg-RX-API-DMAC10.html) | 1972-08-25 |
| CA937496A (en) | 1973-11-27 |
| DE2162445C3 (de) | 1981-04-16 |
| DE2162445A1 (de) | 1972-07-20 |
| GB1366991A (en) | 1974-09-18 |
| JPS4713870A (cg-RX-API-DMAC10.html) | 1972-07-21 |
| DE2162445B2 (de) | 1980-08-28 |