JPS5340077B1 - - Google Patents

Info

Publication number
JPS5340077B1
JPS5340077B1 JP5772A JP5772A JPS5340077B1 JP S5340077 B1 JPS5340077 B1 JP S5340077B1 JP 5772 A JP5772 A JP 5772A JP 5772 A JP5772 A JP 5772A JP S5340077 B1 JPS5340077 B1 JP S5340077B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5772A
Other versions
JPS4713870A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4713870A publication Critical patent/JPS4713870A/ja
Publication of JPS5340077B1 publication Critical patent/JPS5340077B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP5772A 1971-01-08 1972-01-05 Pending JPS5340077B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7100275A NL7100275A (ja) 1971-01-08 1971-01-08

Publications (2)

Publication Number Publication Date
JPS4713870A JPS4713870A (ja) 1972-07-21
JPS5340077B1 true JPS5340077B1 (ja) 1978-10-25

Family

ID=19812221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5772A Pending JPS5340077B1 (ja) 1971-01-08 1972-01-05

Country Status (8)

Country Link
US (1) US3811975A (ja)
JP (1) JPS5340077B1 (ja)
AU (1) AU3742871A (ja)
CA (1) CA937496A (ja)
DE (1) DE2162445C3 (ja)
FR (1) FR2121664B1 (ja)
GB (1) GB1366991A (ja)
NL (1) NL7100275A (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5010572A (ja) * 1973-05-25 1975-02-03
US3923567A (en) * 1974-08-09 1975-12-02 Silicon Materials Inc Method of reclaiming a semiconductor wafer
JPS51102556A (ja) * 1975-03-07 1976-09-10 Hitachi Ltd
US4040893A (en) * 1976-04-12 1977-08-09 General Electric Company Method of selective etching of materials utilizing masks of binary silicate glasses
US4125427A (en) * 1976-08-27 1978-11-14 Ncr Corporation Method of processing a semiconductor
DE3037316C2 (de) * 1979-10-03 1982-12-23 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur Herstellung von Leistungsthyristoren
US4388147A (en) * 1982-08-16 1983-06-14 Intel Corporation Method for steam leaching phosphorus from phosphosilicate glass during semiconductor fabrication
US4525239A (en) * 1984-04-23 1985-06-25 Hewlett-Packard Company Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits
JPS6124240A (ja) * 1984-07-13 1986-02-01 Toshiba Corp 半導体基板
US4589928A (en) * 1984-08-21 1986-05-20 At&T Bell Laboratories Method of making semiconductor integrated circuits having backside gettered with phosphorus
JPH1140498A (ja) 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7410901B2 (en) * 2006-04-27 2008-08-12 Honeywell International, Inc. Submicron device fabrication
US10276362B2 (en) * 2016-04-29 2019-04-30 Infineon Technologies Ag Method for processing a semiconductor region and an electronic device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1209914A (en) * 1967-03-29 1970-10-21 Marconi Co Ltd Improvements in or relating to semi-conductor devices

Also Published As

Publication number Publication date
JPS4713870A (ja) 1972-07-21
GB1366991A (en) 1974-09-18
CA937496A (en) 1973-11-27
DE2162445A1 (de) 1972-07-20
NL7100275A (ja) 1972-07-11
AU3742871A (en) 1973-07-05
FR2121664A1 (ja) 1972-08-25
US3811975A (en) 1974-05-21
FR2121664B1 (ja) 1977-09-02
DE2162445C3 (de) 1981-04-16
DE2162445B2 (de) 1980-08-28

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