JPS533235B2 - - Google Patents

Info

Publication number
JPS533235B2
JPS533235B2 JP12880075A JP12880075A JPS533235B2 JP S533235 B2 JPS533235 B2 JP S533235B2 JP 12880075 A JP12880075 A JP 12880075A JP 12880075 A JP12880075 A JP 12880075A JP S533235 B2 JPS533235 B2 JP S533235B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12880075A
Other languages
Japanese (ja)
Other versions
JPS5167079A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5167079A publication Critical patent/JPS5167079A/ja
Publication of JPS533235B2 publication Critical patent/JPS533235B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/613—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Weting (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP12880075A 1974-10-29 1975-10-25 Expired JPS533235B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB46726/74A GB1485015A (en) 1974-10-29 1974-10-29 Semi-conductor device manufacture

Publications (2)

Publication Number Publication Date
JPS5167079A JPS5167079A (en:Method) 1976-06-10
JPS533235B2 true JPS533235B2 (en:Method) 1978-02-04

Family

ID=10442362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12880075A Expired JPS533235B2 (en:Method) 1974-10-29 1975-10-25

Country Status (10)

Country Link
US (2) US4007104A (en:Method)
JP (1) JPS533235B2 (en:Method)
AU (1) AU500045B2 (en:Method)
BE (1) BE834965A (en:Method)
CA (1) CA1057172A (en:Method)
CH (1) CH595697A5 (en:Method)
DE (1) DE2546564A1 (en:Method)
FR (1) FR2290033A1 (en:Method)
GB (1) GB1485015A (en:Method)
NL (1) NL7512514A (en:Method)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51149784A (en) * 1975-06-17 1976-12-22 Matsushita Electric Ind Co Ltd Solid state light emission device
IT1068248B (it) * 1976-11-16 1985-03-21 Selenia Ind Elettroniche Procedimento per la realizzazione di dispositivi a semiconduttore passivati con dissipatore di calore integrato
US4099987A (en) * 1977-07-25 1978-07-11 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4162185A (en) * 1978-03-21 1979-07-24 International Business Machines Corporation Utilizing saturated and unsaturated halocarbon gases in plasma etching to increase etch of SiO2 relative to Si
US4176004A (en) * 1978-08-21 1979-11-27 Westinghouse Electric Corp. Method for modifying the characteristics of a semiconductor fusions
US4340900A (en) * 1979-06-19 1982-07-20 The United States Of America As Represented By The Secretary Of The Air Force Mesa epitaxial diode with oxide passivated junction and plated heat sink
US4373255A (en) * 1979-06-19 1983-02-15 The United States Of America As Represented By The Secretary Of The Air Force Method of making oxide passivated mesa epitaxial diodes with integral plated heat sink
US4211582A (en) * 1979-06-28 1980-07-08 International Business Machines Corporation Process for making large area isolation trenches utilizing a two-step selective etching technique
FR2476912A1 (fr) * 1980-02-22 1981-08-28 Thomson Csf Procede d'isolement des interconnexions de circuits integres, et circuit integre utilisant ce procede
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures
US4389294A (en) * 1981-06-30 1983-06-21 International Business Machines Corporation Method for avoiding residue on a vertical walled mesa
US4740477A (en) * 1985-10-04 1988-04-26 General Instrument Corporation Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics
GB8607822D0 (en) * 1986-03-27 1986-04-30 Plessey Co Plc Iii-v semiconductor devices
US5164813A (en) * 1988-06-24 1992-11-17 Unitrode Corporation New diode structure
US4980315A (en) * 1988-07-18 1990-12-25 General Instrument Corporation Method of making a passivated P-N junction in mesa semiconductor structure
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
JP3230829B2 (ja) * 1992-01-14 2001-11-19 株式会社日立製作所 車両用交流発電機と整流器
US5695632A (en) * 1995-05-02 1997-12-09 Exxon Research And Engineering Company Continuous in-situ combination process for upgrading heavy oil
CN1047469C (zh) * 1996-09-05 1999-12-15 中国科学院半导体研究所 制作半导体台面侧向电流限制结构的技术
US5844291A (en) * 1996-12-20 1998-12-01 Board Of Regents, The University Of Texas System Wide wavelength range high efficiency avalanche light detector with negative feedback
US5880490A (en) * 1997-07-28 1999-03-09 Board Of Regents, The University Of Texas System Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation
US6232229B1 (en) 1999-11-19 2001-05-15 Micron Technology, Inc. Microelectronic device fabricating method, integrated circuit, and intermediate construction
US6514805B2 (en) * 2001-06-30 2003-02-04 Intel Corporation Trench sidewall profile for device isolation
FR2829616B1 (fr) * 2001-09-10 2004-03-12 St Microelectronics Sa Diode verticale de faible capacite
JP4046586B2 (ja) * 2002-01-16 2008-02-13 シャープ株式会社 化合物半導体素子及びその製造方法
US7162133B2 (en) * 2004-08-20 2007-01-09 Agency For Science Technology And Research Method to trim and smooth high index contrast waveguide structures
JP2009302222A (ja) * 2008-06-12 2009-12-24 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
KR101371401B1 (ko) * 2010-11-03 2014-03-10 한국전자통신연구원 애벌런치 광다이오드 및 그 형성방법
JP5803366B2 (ja) * 2011-07-14 2015-11-04 住友電気工業株式会社 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ
CN115083922B (zh) * 2022-05-31 2025-08-12 中国电子科技集团公司第十三研究所 一种正磨角氧化镓肖特基二极管器件及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
NL6703014A (en:Method) * 1967-02-25 1968-08-26
US3510734A (en) * 1967-10-18 1970-05-05 Hughes Aircraft Co Impatt diode
DE1963757C3 (de) * 1968-12-27 1979-05-03 Matsushita Electronics Corp., Kadoma, Osaka (Japan) Verfahren zum Herstellen eines Mesa-Halbleiterbauelements
US3742593A (en) * 1970-12-11 1973-07-03 Gen Electric Semiconductor device with positively beveled junctions and process for its manufacture
NL7103156A (en:Method) * 1971-03-10 1972-09-12 Philips Nv
DE2117199C3 (de) * 1971-04-08 1974-08-22 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur Herstellung geätzter Muster in dünnen Schichten mit definierten Kantenprofilen
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
US3880684A (en) * 1973-08-03 1975-04-29 Mitsubishi Electric Corp Process for preparing semiconductor
US3886580A (en) * 1973-10-09 1975-05-27 Cutler Hammer Inc Tantalum-gallium arsenide schottky barrier semiconductor device
US3894895A (en) * 1973-10-29 1975-07-15 Trw Inc Mesa etching without overhang for semiconductor devices
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
US3878008A (en) * 1974-02-25 1975-04-15 Us Navy Method of forming high reliability mesa diode

Also Published As

Publication number Publication date
GB1485015A (en) 1977-09-08
US4028140A (en) 1977-06-07
CA1057172A (en) 1979-06-26
JPS5167079A (en:Method) 1976-06-10
NL7512514A (nl) 1976-05-04
CH595697A5 (en:Method) 1978-02-28
DE2546564A1 (de) 1976-05-06
AU8594475A (en) 1977-04-28
FR2290033A1 (fr) 1976-05-28
AU500045B2 (en) 1979-05-10
BE834965A (fr) 1976-04-28
US4007104A (en) 1977-02-08

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