JPS5331715B2 - - Google Patents

Info

Publication number
JPS5331715B2
JPS5331715B2 JP7374674A JP7374674A JPS5331715B2 JP S5331715 B2 JPS5331715 B2 JP S5331715B2 JP 7374674 A JP7374674 A JP 7374674A JP 7374674 A JP7374674 A JP 7374674A JP S5331715 B2 JPS5331715 B2 JP S5331715B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7374674A
Other languages
Japanese (ja)
Other versions
JPS5036079A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5036079A publication Critical patent/JPS5036079A/ja
Publication of JPS5331715B2 publication Critical patent/JPS5331715B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121BJTs having built-in components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP7374674A 1973-06-27 1974-06-27 Expired JPS5331715B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US374230A US3877063A (en) 1973-06-27 1973-06-27 Metallization structure and process for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5036079A JPS5036079A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-04-04
JPS5331715B2 true JPS5331715B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-09-04

Family

ID=23475885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7374674A Expired JPS5331715B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-06-27 1974-06-27

Country Status (6)

Country Link
US (1) US3877063A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5331715B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2430097C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2235491B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1435458A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7408575A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2402304A1 (fr) * 1977-08-31 1979-03-30 Int Computers Ltd Procede de connexion electrique d'une pastille de circuit integre
US4183041A (en) * 1978-06-26 1980-01-08 Rca Corporation Self biasing of a field effect transistor mounted in a flip-chip carrier
JPS5830147A (ja) * 1981-08-18 1983-02-22 Toshiba Corp 半導体装置
US4459321A (en) * 1982-12-30 1984-07-10 International Business Machines Corporation Process for applying closely overlapped mutually protective barrier films
FR2561444B1 (fr) * 1984-03-16 1986-09-19 Thomson Csf Dispositif semi-conducteur hyperfrequence a connexions externes prises au moyen de poutres
US4829363A (en) * 1984-04-13 1989-05-09 Fairchild Camera And Instrument Corp. Structure for inhibiting dopant out-diffusion
DE69032893T2 (de) * 1989-11-30 1999-07-22 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Werkstoff für elektrische Leiter, Elektronikagerät welches diesen verwendet und Flüssig-Kristall-Anzeige
JP2527908Y2 (ja) * 1990-06-01 1997-03-05 エヌオーケー株式会社 抜取り治具
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US5683939A (en) * 1993-04-02 1997-11-04 Harris Corporation Diamond insulator devices and method of fabrication
US6337151B1 (en) 1999-08-18 2002-01-08 International Business Machines Corporation Graded composition diffusion barriers for chip wiring applications
JP4700264B2 (ja) * 2003-05-21 2011-06-15 財団法人国際科学振興財団 半導体装置
WO2006038305A1 (ja) 2004-10-01 2006-04-13 Tadahiro Ohmi 半導体装置およびその製造方法
US20060231919A1 (en) * 2005-04-15 2006-10-19 Blacka Robert J Passive microwave device and method for producing the same
US7538401B2 (en) 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7628309B1 (en) * 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476531A (en) * 1966-09-07 1969-11-04 Western Electric Co Palladium copper contact for soldering
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3740523A (en) * 1971-12-30 1973-06-19 Bell Telephone Labor Inc Encoding of read only memory by laser vaporization

Also Published As

Publication number Publication date
NL7408575A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-12-31
US3877063A (en) 1975-04-08
GB1435458A (en) 1976-05-12
DE2430097A1 (de) 1975-01-16
DE2430097B2 (de) 1978-01-12
FR2235491B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-01-13
FR2235491A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-01-24
DE2430097C3 (de) 1978-09-07
JPS5036079A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1975-04-04

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