JPS5329685A - Photo semiconductor device - Google Patents
Photo semiconductor deviceInfo
- Publication number
- JPS5329685A JPS5329685A JP10404676A JP10404676A JPS5329685A JP S5329685 A JPS5329685 A JP S5329685A JP 10404676 A JP10404676 A JP 10404676A JP 10404676 A JP10404676 A JP 10404676A JP S5329685 A JPS5329685 A JP S5329685A
- Authority
- JP
- Japan
- Prior art keywords
- type
- semiconductor device
- photo semiconductor
- clad layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10404676A JPS5329685A (en) | 1976-08-31 | 1976-08-31 | Photo semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10404676A JPS5329685A (en) | 1976-08-31 | 1976-08-31 | Photo semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5329685A true JPS5329685A (en) | 1978-03-20 |
| JPS5412399B2 JPS5412399B2 (OSRAM) | 1979-05-22 |
Family
ID=14370264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10404676A Granted JPS5329685A (en) | 1976-08-31 | 1976-08-31 | Photo semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5329685A (OSRAM) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5541714A (en) * | 1978-09-16 | 1980-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Selective diffusion method of impurity into inp crystal |
| JPS5621387A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Semiconductor luminescent device |
| JPS5976492A (ja) * | 1983-09-22 | 1984-05-01 | Hitachi Ltd | 半導体レ−ザ−装置 |
| JPS6039615A (ja) * | 1983-08-15 | 1985-03-01 | Nippon Telegr & Teleph Corp <Ntt> | 光スイツチ |
-
1976
- 1976-08-31 JP JP10404676A patent/JPS5329685A/ja active Granted
Non-Patent Citations (6)
| Title |
|---|
| APPLIED PHYSICS LETEERS=1976US * |
| APPLIED PHYSICS LETTERS#N1=1976 * |
| APPLIED PHYSICS LETTERS=1976US * |
| JOURNAL OF APPLIED PHIYSICS=1971US * |
| JOURNAL OF APPLIED PHYSICS#N5=1976 * |
| SOLID-STATE ELECTRONICS=1975GB * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5541714A (en) * | 1978-09-16 | 1980-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Selective diffusion method of impurity into inp crystal |
| JPS5621387A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Semiconductor luminescent device |
| JPS6039615A (ja) * | 1983-08-15 | 1985-03-01 | Nippon Telegr & Teleph Corp <Ntt> | 光スイツチ |
| JPS5976492A (ja) * | 1983-09-22 | 1984-05-01 | Hitachi Ltd | 半導体レ−ザ−装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5412399B2 (OSRAM) | 1979-05-22 |
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