JPS5321984B2 - - Google Patents

Info

Publication number
JPS5321984B2
JPS5321984B2 JP7847973A JP7847973A JPS5321984B2 JP S5321984 B2 JPS5321984 B2 JP S5321984B2 JP 7847973 A JP7847973 A JP 7847973A JP 7847973 A JP7847973 A JP 7847973A JP S5321984 B2 JPS5321984 B2 JP S5321984B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7847973A
Other versions
JPS5028737A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7847973A priority Critical patent/JPS5321984B2/ja
Priority to US488776A priority patent/US3909806A/en
Publication of JPS5028737A publication Critical patent/JPS5028737A/ja
Publication of JPS5321984B2 publication Critical patent/JPS5321984B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
JP7847973A 1973-07-13 1973-07-13 Expired JPS5321984B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7847973A JPS5321984B2 (ja) 1973-07-13 1973-07-13
US488776A US3909806A (en) 1973-07-13 1974-07-15 Analogue memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7847973A JPS5321984B2 (ja) 1973-07-13 1973-07-13

Publications (2)

Publication Number Publication Date
JPS5028737A JPS5028737A (ja) 1975-03-24
JPS5321984B2 true JPS5321984B2 (ja) 1978-07-06

Family

ID=13663128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7847973A Expired JPS5321984B2 (ja) 1973-07-13 1973-07-13

Country Status (2)

Country Link
US (1) US3909806A (ja)
JP (1) JPS5321984B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638537U (ja) * 1992-04-01 1994-05-24 英雄 増田 電気ウキ

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209852A (en) * 1974-11-11 1980-06-24 Hyatt Gilbert P Signal processing and memory arrangement
JPS5141772B2 (ja) * 1972-07-07 1976-11-11
JPS5235536A (en) * 1975-09-13 1977-03-18 Toshiba Corp Memory using charge cobination element
JPS5290249A (en) * 1976-01-23 1977-07-29 Agency Of Ind Science & Technol Non-volatile analog memory
US4074237A (en) * 1976-03-08 1978-02-14 International Business Machines Corporation Word line clamping circuit and decoder
JPS53644A (en) * 1976-06-24 1978-01-06 Ishikawajima Tekko Kensetsu Erection method of unit slab in bridge erection construction work and crane for erection
US4068311A (en) * 1976-12-03 1978-01-10 The United States Of America As Represented By The Secretary Of The Navy Discrete transform systems using permuter memories
US4127901A (en) * 1977-08-03 1978-11-28 Sperry Rand Corporation MNOS FET memory retention characterization test circuit
GB2002129B (en) * 1977-08-03 1982-01-20 Sperry Rand Corp Apparatus for testing semiconductor memories
JPS5456701A (en) * 1977-10-14 1979-05-08 Sanyo Electric Co Ltd Preset receiving device
JPS5456746A (en) * 1977-11-16 1979-05-08 Sanyo Electric Co Ltd Writing circuit for analog memory
JPS6023432B2 (ja) * 1977-12-09 1985-06-07 株式会社日立製作所 Ｍｏｓメモリ
USRE32401E (en) * 1978-06-13 1987-04-14 International Business Machines Corporation Quaternary FET read only memory
US4627027A (en) * 1982-09-01 1986-12-02 Sanyo Electric Co., Ltd. Analog storing and reproducing apparatus utilizing non-volatile memory elements
JPS59106152A (ja) * 1982-12-10 1984-06-19 Nec Corp 半導体装置
US4890259A (en) * 1988-07-13 1989-12-26 Information Storage Devices High density integrated circuit analog signal recording and playback system
US5220531A (en) * 1991-01-02 1993-06-15 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
JPH04238196A (ja) * 1991-01-22 1992-08-26 Nec Ic Microcomput Syst Ltd Ｅｐｒｏｍ回路
JP2502008B2 (ja) * 1992-06-04 1996-05-29 株式会社東芝 不揮発性半導体メモリ
US5504699A (en) * 1994-04-08 1996-04-02 Goller; Stuart E. Nonvolatile magnetic analog memory
US6980471B1 (en) * 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3373295A (en) * 1965-04-27 1968-03-12 Aerojet General Co Memory element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0638537U (ja) * 1992-04-01 1994-05-24 英雄 増田 電気ウキ

Also Published As

Publication number Publication date
JPS5028737A (ja) 1975-03-24
US3909806A (en) 1975-09-30

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