JPS53149779A - Preventive structure from transition vibration of semiconductor laser element - Google Patents

Preventive structure from transition vibration of semiconductor laser element

Info

Publication number
JPS53149779A
JPS53149779A JP4090978A JP4090978A JPS53149779A JP S53149779 A JPS53149779 A JP S53149779A JP 4090978 A JP4090978 A JP 4090978A JP 4090978 A JP4090978 A JP 4090978A JP S53149779 A JPS53149779 A JP S53149779A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser element
preventive structure
transition vibration
vibration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4090978A
Other languages
Japanese (ja)
Inventor
Yukio Kurata
Morichika Yano
Saburo Yamamoto
Kaneki Matsui
Akira Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4090978A priority Critical patent/JPS53149779A/en
Publication of JPS53149779A publication Critical patent/JPS53149779A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To fabricate a light semiconductor which functions to stabilize a light output, by simultaneously forming aluminous element and mirror body, which reflects some of the light output and makes it to strike the luminous element again, on one substrate.
JP4090978A 1978-04-06 1978-04-06 Preventive structure from transition vibration of semiconductor laser element Pending JPS53149779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4090978A JPS53149779A (en) 1978-04-06 1978-04-06 Preventive structure from transition vibration of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4090978A JPS53149779A (en) 1978-04-06 1978-04-06 Preventive structure from transition vibration of semiconductor laser element

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP844677A Division JPS5393789A (en) 1977-01-27 1977-01-27 Monitor strcutre of photo semiconductor

Publications (1)

Publication Number Publication Date
JPS53149779A true JPS53149779A (en) 1978-12-27

Family

ID=12593625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4090978A Pending JPS53149779A (en) 1978-04-06 1978-04-06 Preventive structure from transition vibration of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS53149779A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190089A (en) * 1982-04-08 1983-11-05 ヌルデイン・ブアドマ Method of producing semiconductor laser with plural independent wavelengths and lasers made by same method
JPS59500248A (en) * 1982-02-09 1984-02-16 アイ、テイ−、テイ−，インダストリ−ズ　インコ−ポレ−テッド semiconductor laser

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134593A (en) * 1975-05-17 1976-11-22 Nec Corp Semiconductor lesser device which can perform high-speed modulation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51134593A (en) * 1975-05-17 1976-11-22 Nec Corp Semiconductor lesser device which can perform high-speed modulation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59500248A (en) * 1982-02-09 1984-02-16 アイ、テイ−、テイ−，インダストリ−ズ　インコ−ポレ−テッド semiconductor laser
JPS58190089A (en) * 1982-04-08 1983-11-05 ヌルデイン・ブアドマ Method of producing semiconductor laser with plural independent wavelengths and lasers made by same method

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