JPS53147483A - Semiconductor ic - Google Patents

Semiconductor ic

Info

Publication number
JPS53147483A
JPS53147483A JP6264877A JP6264877A JPS53147483A JP S53147483 A JPS53147483 A JP S53147483A JP 6264877 A JP6264877 A JP 6264877A JP 6264877 A JP6264877 A JP 6264877A JP S53147483 A JPS53147483 A JP S53147483A
Authority
JP
Japan
Prior art keywords
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6264877A
Other languages
English (en)
Other versions
JPS5751980B2 (ja
Inventor
Jiyunichi Nishizawa
Tadahiro Oomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP6264877A priority Critical patent/JPS53147483A/ja
Priority to NL7805149A priority patent/NL188061C/xx
Priority to DE19782820913 priority patent/DE2820913A1/de
Priority to GB1934678A priority patent/GB1602984A/en
Priority to FR7814455A priority patent/FR2391563A1/fr
Priority to US05/907,318 priority patent/US4270059A/en
Publication of JPS53147483A publication Critical patent/JPS53147483A/ja
Publication of JPS5751980B2 publication Critical patent/JPS5751980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Logic Circuits (AREA)
JP6264877A 1977-05-15 1977-05-28 Semiconductor ic Granted JPS53147483A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP6264877A JPS53147483A (en) 1977-05-28 1977-05-28 Semiconductor ic
NL7805149A NL188061C (nl) 1977-05-15 1978-05-12 Geintegreerde halfgeleiderinrichting.
DE19782820913 DE2820913A1 (de) 1977-05-15 1978-05-12 Integrierte halbleitervorrichtung
GB1934678A GB1602984A (en) 1977-05-15 1978-05-12 Integrated semiconductor circuit
FR7814455A FR2391563A1 (fr) 1977-05-15 1978-05-16 Composant semi-conducteur integre
US05/907,318 US4270059A (en) 1977-05-28 1978-05-18 Static induction transistor logic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6264877A JPS53147483A (en) 1977-05-28 1977-05-28 Semiconductor ic

Publications (2)

Publication Number Publication Date
JPS53147483A true JPS53147483A (en) 1978-12-22
JPS5751980B2 JPS5751980B2 (ja) 1982-11-05

Family

ID=13206351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6264877A Granted JPS53147483A (en) 1977-05-15 1977-05-28 Semiconductor ic

Country Status (2)

Country Link
US (1) US4270059A (ja)
JP (1) JPS53147483A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269578A (ja) * 1987-04-28 1988-11-07 Olympus Optical Co Ltd 半導体装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326209A (en) * 1977-04-13 1982-04-20 Nippon Gakki Seizo Kabushiki Kaisha Static induction transistor
DE2949201A1 (de) * 1979-12-06 1981-06-11 Siemens AG, 1000 Berlin und 8000 München Aus i (pfeil hoch)2(pfeil hoch) l-zellen und weiteren schaltungsteilen bestehende monolithisch integrierte halbleiterschaltung
US4365262A (en) * 1980-11-26 1982-12-21 Handotai Kenkyu Shinkokai Semiconductor image sensor
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
JPH0795592B2 (ja) * 1987-04-14 1995-10-11 株式会社豊田中央研究所 静電誘導型半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181583A (ja) * 1975-01-16 1976-07-16 Tokyo Shibaura Electric Co
JPS529384A (en) * 1975-07-11 1977-01-24 Nippon Telegr & Teleph Corp <Ntt> Transistor circuit device
JPS53140980A (en) * 1977-05-15 1978-12-08 Handotai Kenkyu Shinkokai Semiconductor ic

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7414273A (nl) * 1974-11-01 1976-05-04 Philips Nv Logische schakeling.
JPS5811102B2 (ja) * 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路
US4012684A (en) * 1976-03-29 1977-03-15 Rca Corporation Voltage regulator circuit with FET and bipolar transistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5181583A (ja) * 1975-01-16 1976-07-16 Tokyo Shibaura Electric Co
JPS529384A (en) * 1975-07-11 1977-01-24 Nippon Telegr & Teleph Corp <Ntt> Transistor circuit device
JPS53140980A (en) * 1977-05-15 1978-12-08 Handotai Kenkyu Shinkokai Semiconductor ic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63269578A (ja) * 1987-04-28 1988-11-07 Olympus Optical Co Ltd 半導体装置

Also Published As

Publication number Publication date
US4270059A (en) 1981-05-26
JPS5751980B2 (ja) 1982-11-05

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