JPS5314420B2 - - Google Patents
Info
- Publication number
- JPS5314420B2 JPS5314420B2 JP5343273A JP5343273A JPS5314420B2 JP S5314420 B2 JPS5314420 B2 JP S5314420B2 JP 5343273 A JP5343273 A JP 5343273A JP 5343273 A JP5343273 A JP 5343273A JP S5314420 B2 JPS5314420 B2 JP S5314420B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/125—Polycrystalline passivation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5343273A JPS5314420B2 (US20030220297A1-20031127-C00074.png) | 1973-05-14 | 1973-05-14 | |
| GB2023574A GB1450293A (en) | 1973-05-14 | 1974-05-08 | Semiconductor integrated circuits |
| DE2422912A DE2422912A1 (de) | 1973-05-14 | 1974-05-11 | Integrierter halbleiterkreis |
| NL7406422A NL7406422A (US20030220297A1-20031127-C00074.png) | 1973-05-14 | 1974-05-13 | |
| CA199,627A CA1001773A (en) | 1973-05-14 | 1974-05-13 | Darlington amplifier with high breakdown voltage |
| US05/469,841 US3977019A (en) | 1973-05-14 | 1974-05-14 | Semiconductor integrated circuit |
| FR7416656A FR2230079B1 (US20030220297A1-20031127-C00074.png) | 1973-05-14 | 1974-05-14 | |
| IT22697/74A IT1012351B (it) | 1973-05-14 | 1974-05-14 | Circuito integrato semiconduttore |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5343273A JPS5314420B2 (US20030220297A1-20031127-C00074.png) | 1973-05-14 | 1973-05-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS503587A JPS503587A (US20030220297A1-20031127-C00074.png) | 1975-01-14 |
| JPS5314420B2 true JPS5314420B2 (US20030220297A1-20031127-C00074.png) | 1978-05-17 |
Family
ID=12942669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5343273A Expired JPS5314420B2 (US20030220297A1-20031127-C00074.png) | 1973-05-14 | 1973-05-14 |
Country Status (8)
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4176372A (en) * | 1974-03-30 | 1979-11-27 | Sony Corporation | Semiconductor device having oxygen doped polycrystalline passivation layer |
| JPS5534582B2 (US20030220297A1-20031127-C00074.png) * | 1974-06-24 | 1980-09-08 | ||
| JPS5193874A (en) * | 1975-02-15 | 1976-08-17 | Handotaisochino seizohoho | |
| JPS51126761A (en) * | 1975-04-25 | 1976-11-05 | Sony Corp | Schottky barrier type semi-conductor unit |
| JPS51128269A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
| JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
| US4148055A (en) * | 1975-12-29 | 1979-04-03 | U.S. Philips Corporation | Integrated circuit having complementary bipolar transistors |
| US4160989A (en) * | 1975-12-29 | 1979-07-10 | U.S. Philips Corporation | Integrated circuit having complementary bipolar transistors |
| JPS5383250U (US20030220297A1-20031127-C00074.png) * | 1976-12-09 | 1978-07-10 | ||
| JPS596514B2 (ja) * | 1977-03-08 | 1984-02-13 | 日本電信電話株式会社 | Ｐｎ接合分離法による低漏話モノリシツクｐｎｐｎスイツチマトリクス |
| US4194934A (en) * | 1977-05-23 | 1980-03-25 | Varo Semiconductor, Inc. | Method of passivating a semiconductor device utilizing dual polycrystalline layers |
| DE2841943C2 (de) * | 1978-09-27 | 1983-12-15 | Metzeler Schaum Gmbh, 8940 Memmingen | Vorrichtung zum kontinuierlichen Herstellen von Polyurethan-Schaumstoffblöcken mit ebener Oberfläche |
| US4399449A (en) * | 1980-11-17 | 1983-08-16 | International Rectifier Corporation | Composite metal and polysilicon field plate structure for high voltage semiconductor devices |
| US4344985A (en) * | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
| JPS5976466A (ja) * | 1982-10-25 | 1984-05-01 | Mitsubishi Electric Corp | プレ−ナ形半導体装置 |
| JPS6168187A (ja) * | 1984-09-11 | 1986-04-08 | キヤノン株式会社 | 洗浄装置 |
| JPS61222172A (ja) * | 1985-03-15 | 1986-10-02 | Sharp Corp | Ｍｏｓｆｅｔのゲ−ト絶縁膜形成方法 |
| GB2183907B (en) * | 1985-11-27 | 1989-10-04 | Raytheon Co | Semiconductor device |
| US4936928A (en) * | 1985-11-27 | 1990-06-26 | Raytheon Company | Semiconductor device |
| US4829689A (en) * | 1986-06-25 | 1989-05-16 | Merchandising Workshop, Inc. | Article for display of information |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3725150A (en) * | 1971-10-29 | 1973-04-03 | Motorola Inc | Process for making a fine geometry, self-aligned device structure |
-
1973
- 1973-05-14 JP JP5343273A patent/JPS5314420B2/ja not_active Expired
-
1974
- 1974-05-08 GB GB2023574A patent/GB1450293A/en not_active Expired
- 1974-05-11 DE DE2422912A patent/DE2422912A1/de not_active Withdrawn
- 1974-05-13 CA CA199,627A patent/CA1001773A/en not_active Expired
- 1974-05-13 NL NL7406422A patent/NL7406422A/xx not_active Application Discontinuation
- 1974-05-14 US US05/469,841 patent/US3977019A/en not_active Expired - Lifetime
- 1974-05-14 IT IT22697/74A patent/IT1012351B/it active
- 1974-05-14 FR FR7416656A patent/FR2230079B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS503587A (US20030220297A1-20031127-C00074.png) | 1975-01-14 |
| FR2230079B1 (US20030220297A1-20031127-C00074.png) | 1977-10-28 |
| US3977019A (en) | 1976-08-24 |
| NL7406422A (US20030220297A1-20031127-C00074.png) | 1974-11-18 |
| DE2422912A1 (de) | 1974-12-05 |
| GB1450293A (en) | 1976-09-22 |
| IT1012351B (it) | 1977-03-10 |
| CA1001773A (en) | 1976-12-14 |
| FR2230079A1 (US20030220297A1-20031127-C00074.png) | 1974-12-13 |
