Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP5150477ApriorityCriticalpatent/JPS53136970A/en
Publication of JPS53136970ApublicationCriticalpatent/JPS53136970A/en
PURPOSE: To enhance the backward characteristics by exposing the semiconductor substrate into the N2 atmosphere after formation of the electrode and wiring, being soaked into the water solution of the hydrofluoric acid group, and giving etching to the surface to remove the univalent ion.
COPYRIGHT: (C)1978,JPO&Japio
JP5150477A1977-05-041977-05-04Surface treatment method of semiconductor device
PendingJPS53136970A
(en)