JPS53121463A - Gas phase reaction method for semiconductor substrate - Google Patents
Gas phase reaction method for semiconductor substrateInfo
- Publication number
- JPS53121463A JPS53121463A JP3519877A JP3519877A JPS53121463A JP S53121463 A JPS53121463 A JP S53121463A JP 3519877 A JP3519877 A JP 3519877A JP 3519877 A JP3519877 A JP 3519877A JP S53121463 A JPS53121463 A JP S53121463A
- Authority
- JP
- Japan
- Prior art keywords
- gas phase
- phase reaction
- semiconductor substrate
- reaction method
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010574 gas phase reaction Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3519877A JPS53121463A (en) | 1977-03-31 | 1977-03-31 | Gas phase reaction method for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3519877A JPS53121463A (en) | 1977-03-31 | 1977-03-31 | Gas phase reaction method for semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53121463A true JPS53121463A (en) | 1978-10-23 |
| JPS6225253B2 JPS6225253B2 (enrdf_load_stackoverflow) | 1987-06-02 |
Family
ID=12435156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3519877A Granted JPS53121463A (en) | 1977-03-31 | 1977-03-31 | Gas phase reaction method for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53121463A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63197762U (enrdf_load_stackoverflow) * | 1987-06-12 | 1988-12-20 |
-
1977
- 1977-03-31 JP JP3519877A patent/JPS53121463A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6225253B2 (enrdf_load_stackoverflow) | 1987-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS53121463A (en) | Gas phase reaction method for semiconductor substrate | |
| JPS526896A (en) | Device to predict the output distribution of atomic reactor | |
| JPS5368480A (en) | Workpiece fixing device | |
| JPS5439576A (en) | Inspection method for semiconductor device | |
| JPS53118607A (en) | H2 gas power plant | |
| JPS5423472A (en) | Manufacture for semiconductor device | |
| JPS5220522A (en) | Vehicle window glass mount clip | |
| JPS54744A (en) | Attaching panel for switchboard | |
| JPS5434680A (en) | Structure of circuit substrate | |
| JPS549394A (en) | Mounting method for shielding wall of reactor | |
| JPS53128979A (en) | Growing method for semiconductor crystal | |
| JPS5314542A (en) | Non-stable multi-vibrator | |
| JPS528991A (en) | Gas phase reacting apparatus | |
| JPS53148971A (en) | Manufacture of semiconductor rectifying device | |
| JPS52104336A (en) | Device for mounting foldble | |
| JPS5388227A (en) | Anti-vibration method of pipe | |
| JPS5327381A (en) | Packaging method of solar batteries | |
| JPS52149545A (en) | Air tight fixing device | |
| JPS5340960A (en) | Device for holding and hoisting inside wall of small-diameter column | |
| JPS5380953A (en) | A-d converter | |
| JPS5299856A (en) | Reinforced cover glass for watch | |
| JPS53104020A (en) | Gas turbine combustor | |
| JPS5211782A (en) | Method of manufacturing semiconductor device | |
| JPS51130289A (en) | A sanpling method for upper air with radiocontrol airplane | |
| JPS5440565A (en) | Wafer chamfering method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Effective date: 20040316 Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040415 |
|
| R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090423 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090423 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 6 Free format text: PAYMENT UNTIL: 20100423 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20110423 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 7 Free format text: PAYMENT UNTIL: 20110423 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120423 Year of fee payment: 8 |
|
| LAPS | Cancellation because of no payment of annual fees |