JPS5283080A - Ic and method of producing same - Google Patents

Ic and method of producing same

Info

Publication number
JPS5283080A
JPS5283080A JP15661676A JP15661676A JPS5283080A JP S5283080 A JPS5283080 A JP S5283080A JP 15661676 A JP15661676 A JP 15661676A JP 15661676 A JP15661676 A JP 15661676A JP S5283080 A JPS5283080 A JP S5283080A
Authority
JP
Japan
Prior art keywords
producing same
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15661676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5514539B2 (enExample
Inventor
Furantsu Yoozefu Buorufugangu
Do Burebison Mishieru
Pieeru Anri Bie Jiyan
Mishieru Dekuruuan Jiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5283080A publication Critical patent/JPS5283080A/ja
Publication of JPS5514539B2 publication Critical patent/JPS5514539B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/643—Combinations of non-inverted vertical BJTs and inverted vertical BJTs
    • H10P32/1414—
    • H10P32/171—
    • H10W10/011—
    • H10W10/10—
    • H10W72/00—

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP15661676A 1975-12-29 1976-12-27 Ic and method of producing same Granted JPS5283080A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7539963A FR2337432A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention

Publications (2)

Publication Number Publication Date
JPS5283080A true JPS5283080A (en) 1977-07-11
JPS5514539B2 JPS5514539B2 (enExample) 1980-04-17

Family

ID=9164256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15661676A Granted JPS5283080A (en) 1975-12-29 1976-12-27 Ic and method of producing same

Country Status (8)

Country Link
JP (1) JPS5283080A (enExample)
AU (1) AU506891B2 (enExample)
CH (1) CH609489A5 (enExample)
DE (1) DE2657822A1 (enExample)
FR (1) FR2337432A1 (enExample)
GB (1) GB1571621A (enExample)
NL (1) NL7614383A (enExample)
SE (1) SE7614560L (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470781A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS567466A (en) * 1979-06-29 1981-01-26 Ibm Selffalignment semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539742A (en) * 1981-06-22 1985-09-10 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
NL7107040A (enExample) * 1971-05-22 1972-11-24
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470781A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
JPS567466A (en) * 1979-06-29 1981-01-26 Ibm Selffalignment semiconductor device

Also Published As

Publication number Publication date
SE7614560L (sv) 1977-06-30
FR2337432A1 (fr) 1977-07-29
DE2657822C2 (enExample) 1989-10-05
AU2090976A (en) 1978-06-29
JPS5514539B2 (enExample) 1980-04-17
AU506891B2 (en) 1980-01-24
CH609489A5 (en) 1979-02-28
GB1571621A (en) 1980-07-16
NL7614383A (nl) 1977-07-01
DE2657822A1 (de) 1977-07-07
FR2337432B1 (enExample) 1979-06-22

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