AU506891B2 - Complementary bipolar transistors - Google Patents

Complementary bipolar transistors

Info

Publication number
AU506891B2
AU506891B2 AU20909/76A AU2090976A AU506891B2 AU 506891 B2 AU506891 B2 AU 506891B2 AU 20909/76 A AU20909/76 A AU 20909/76A AU 2090976 A AU2090976 A AU 2090976A AU 506891 B2 AU506891 B2 AU 506891B2
Authority
AU
Australia
Prior art keywords
bipolar transistors
complementary bipolar
complementary
transistors
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU20909/76A
Other languages
English (en)
Other versions
AU2090976A (en
Inventor
W. F. J. De Brebisson M. Birt J-P and De Groueff J-M Etlinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU2090976A publication Critical patent/AU2090976A/en
Application granted granted Critical
Publication of AU506891B2 publication Critical patent/AU506891B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/643Combinations of non-inverted vertical BJTs and inverted vertical BJTs
    • H10P32/1414
    • H10P32/171
    • H10W10/011
    • H10W10/10
    • H10W72/00
AU20909/76A 1975-12-29 1976-12-24 Complementary bipolar transistors Expired AU506891B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7539963A FR2337432A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention
FRFR7539963 1975-12-29

Publications (2)

Publication Number Publication Date
AU2090976A AU2090976A (en) 1978-06-29
AU506891B2 true AU506891B2 (en) 1980-01-24

Family

ID=9164256

Family Applications (1)

Application Number Title Priority Date Filing Date
AU20909/76A Expired AU506891B2 (en) 1975-12-29 1976-12-24 Complementary bipolar transistors

Country Status (8)

Country Link
JP (1) JPS5283080A (enExample)
AU (1) AU506891B2 (enExample)
CH (1) CH609489A5 (enExample)
DE (1) DE2657822A1 (enExample)
FR (1) FR2337432A1 (enExample)
GB (1) GB1571621A (enExample)
NL (1) NL7614383A (enExample)
SE (1) SE7614560L (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470781A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor
US4539742A (en) * 1981-06-22 1985-09-10 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
NL7107040A (enExample) * 1971-05-22 1972-11-24
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Also Published As

Publication number Publication date
SE7614560L (sv) 1977-06-30
FR2337432A1 (fr) 1977-07-29
DE2657822C2 (enExample) 1989-10-05
JPS5283080A (en) 1977-07-11
AU2090976A (en) 1978-06-29
JPS5514539B2 (enExample) 1980-04-17
CH609489A5 (en) 1979-02-28
GB1571621A (en) 1980-07-16
NL7614383A (nl) 1977-07-01
DE2657822A1 (de) 1977-07-07
FR2337432B1 (enExample) 1979-06-22

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