AU506891B2 - Complementary bipolar transistors - Google Patents

Complementary bipolar transistors

Info

Publication number
AU506891B2
AU506891B2 AU20909/76A AU2090976A AU506891B2 AU 506891 B2 AU506891 B2 AU 506891B2 AU 20909/76 A AU20909/76 A AU 20909/76A AU 2090976 A AU2090976 A AU 2090976A AU 506891 B2 AU506891 B2 AU 506891B2
Authority
AU
Australia
Prior art keywords
bipolar transistors
complementary bipolar
complementary
transistors
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU20909/76A
Other languages
English (en)
Other versions
AU2090976A (en
Inventor
W. F. J. De Brebisson M. Birt J-P and De Groueff J-M Etlinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU2090976A publication Critical patent/AU2090976A/en
Application granted granted Critical
Publication of AU506891B2 publication Critical patent/AU506891B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/643—Combinations of non-inverted vertical BJTs and inverted vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
AU20909/76A 1975-12-29 1976-12-24 Complementary bipolar transistors Expired AU506891B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7539963A FR2337432A1 (fr) 1975-12-29 1975-12-29 Perfectionnement a la structure des circuits integres a transistors bipolaires complementaires et procede d'obtention
FRFR7539963 1975-12-29

Publications (2)

Publication Number Publication Date
AU2090976A AU2090976A (en) 1978-06-29
AU506891B2 true AU506891B2 (en) 1980-01-24

Family

ID=9164256

Family Applications (1)

Application Number Title Priority Date Filing Date
AU20909/76A Expired AU506891B2 (en) 1975-12-29 1976-12-24 Complementary bipolar transistors

Country Status (8)

Country Link
JP (1) JPS5283080A (enExample)
AU (1) AU506891B2 (enExample)
CH (1) CH609489A5 (enExample)
DE (1) DE2657822A1 (enExample)
FR (1) FR2337432A1 (enExample)
GB (1) GB1571621A (enExample)
NL (1) NL7614383A (enExample)
SE (1) SE7614560L (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470781A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture
US4338622A (en) * 1979-06-29 1982-07-06 International Business Machines Corporation Self-aligned semiconductor circuits and process therefor
US4539742A (en) * 1981-06-22 1985-09-10 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624467A (en) * 1969-02-17 1971-11-30 Texas Instruments Inc Monolithic integrated-circuit structure and method of fabrication
NL7107040A (enExample) * 1971-05-22 1972-11-24
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung
US3904450A (en) * 1974-04-26 1975-09-09 Bell Telephone Labor Inc Method of fabricating injection logic integrated circuits using oxide isolation

Also Published As

Publication number Publication date
FR2337432B1 (enExample) 1979-06-22
JPS5514539B2 (enExample) 1980-04-17
FR2337432A1 (fr) 1977-07-29
JPS5283080A (en) 1977-07-11
CH609489A5 (en) 1979-02-28
AU2090976A (en) 1978-06-29
DE2657822A1 (de) 1977-07-07
SE7614560L (sv) 1977-06-30
NL7614383A (nl) 1977-07-01
GB1571621A (en) 1980-07-16
DE2657822C2 (enExample) 1989-10-05

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