JPS5279676A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS5279676A
JPS5279676A JP50157091A JP15709175A JPS5279676A JP S5279676 A JPS5279676 A JP S5279676A JP 50157091 A JP50157091 A JP 50157091A JP 15709175 A JP15709175 A JP 15709175A JP S5279676 A JPS5279676 A JP S5279676A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
pnp
power consumption
composite structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50157091A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5634097B2 (enrdf_load_html_response
Inventor
Shuichi Kato
Takao Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50157091A priority Critical patent/JPS5279676A/ja
Publication of JPS5279676A publication Critical patent/JPS5279676A/ja
Publication of JPS5634097B2 publication Critical patent/JPS5634097B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP50157091A 1975-12-25 1975-12-25 Integrated circuit device Granted JPS5279676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50157091A JPS5279676A (en) 1975-12-25 1975-12-25 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50157091A JPS5279676A (en) 1975-12-25 1975-12-25 Integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5279676A true JPS5279676A (en) 1977-07-04
JPS5634097B2 JPS5634097B2 (enrdf_load_html_response) 1981-08-07

Family

ID=15642038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50157091A Granted JPS5279676A (en) 1975-12-25 1975-12-25 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5279676A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPS5634097B2 (enrdf_load_html_response) 1981-08-07

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