JPS51149777A - Electronic circuit - Google Patents

Electronic circuit

Info

Publication number
JPS51149777A
JPS51149777A JP50071184A JP7118475A JPS51149777A JP S51149777 A JPS51149777 A JP S51149777A JP 50071184 A JP50071184 A JP 50071184A JP 7118475 A JP7118475 A JP 7118475A JP S51149777 A JPS51149777 A JP S51149777A
Authority
JP
Japan
Prior art keywords
electronic circuit
fet
mosfet
cmos
power consumption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50071184A
Other languages
Japanese (ja)
Inventor
Hidetoshi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP50071184A priority Critical patent/JPS51149777A/en
Publication of JPS51149777A publication Critical patent/JPS51149777A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain a large output amplitude with a low power consumption by individually biasing P and N MOSFET to independently determine the operating points in CMOS, FET.
JP50071184A 1975-06-12 1975-06-12 Electronic circuit Pending JPS51149777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50071184A JPS51149777A (en) 1975-06-12 1975-06-12 Electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071184A JPS51149777A (en) 1975-06-12 1975-06-12 Electronic circuit

Publications (1)

Publication Number Publication Date
JPS51149777A true JPS51149777A (en) 1976-12-22

Family

ID=13453303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071184A Pending JPS51149777A (en) 1975-06-12 1975-06-12 Electronic circuit

Country Status (1)

Country Link
JP (1) JPS51149777A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255048A (en) * 1985-05-07 1986-11-12 Mitsubishi Electric Corp Internal supply voltage generating circuit in semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61255048A (en) * 1985-05-07 1986-11-12 Mitsubishi Electric Corp Internal supply voltage generating circuit in semiconductor integrated circuit

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