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Priority to JP50157091ApriorityCriticalpatent/JPS5279676A/ja
Publication of JPS5279676ApublicationCriticalpatent/JPS5279676A/ja
Publication of JPS5634097B2publicationCriticalpatent/JPS5634097B2/ja
H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
H10D84/401—Combinations of FETs or IGBTs with BJTs
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Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits
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