JPS5279666A - Production of transistor - Google Patents

Production of transistor

Info

Publication number
JPS5279666A
JPS5279666A JP15936375A JP15936375A JPS5279666A JP S5279666 A JPS5279666 A JP S5279666A JP 15936375 A JP15936375 A JP 15936375A JP 15936375 A JP15936375 A JP 15936375A JP S5279666 A JPS5279666 A JP S5279666A
Authority
JP
Japan
Prior art keywords
transistor
production
coating
phosphorus
uniformity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15936375A
Other languages
Japanese (ja)
Other versions
JPS5530304B2 (en
Inventor
Hideaki Matsubara
Koki Kato
Akio Saito
Yoshikazu Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15936375A priority Critical patent/JPS5279666A/en
Publication of JPS5279666A publication Critical patent/JPS5279666A/en
Publication of JPS5530304B2 publication Critical patent/JPS5530304B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To achieve the uniformity of characteristics and the improvement in noise level by diffusing phosphorus through the SiO2 film formed by coating of a coating agent containing SiO2 powder and a high concentration of organic phosphorus on a base diffused region.
JP15936375A 1975-12-25 1975-12-25 Production of transistor Granted JPS5279666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15936375A JPS5279666A (en) 1975-12-25 1975-12-25 Production of transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15936375A JPS5279666A (en) 1975-12-25 1975-12-25 Production of transistor

Publications (2)

Publication Number Publication Date
JPS5279666A true JPS5279666A (en) 1977-07-04
JPS5530304B2 JPS5530304B2 (en) 1980-08-09

Family

ID=15692195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15936375A Granted JPS5279666A (en) 1975-12-25 1975-12-25 Production of transistor

Country Status (1)

Country Link
JP (1) JPS5279666A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635464A (en) * 1979-08-30 1981-04-08 Toshiba Corp Formation of npn type transistor
JPS58168221A (en) * 1982-03-29 1983-10-04 Toshiba Corp Preparation of semiconductor device
JP2002075892A (en) * 2000-08-28 2002-03-15 Sanken Electric Co Ltd Liquid impurity raw material, and semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890473A (en) * 1972-02-14 1973-11-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890473A (en) * 1972-02-14 1973-11-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635464A (en) * 1979-08-30 1981-04-08 Toshiba Corp Formation of npn type transistor
JPS58168221A (en) * 1982-03-29 1983-10-04 Toshiba Corp Preparation of semiconductor device
JP2002075892A (en) * 2000-08-28 2002-03-15 Sanken Electric Co Ltd Liquid impurity raw material, and semiconductor device

Also Published As

Publication number Publication date
JPS5530304B2 (en) 1980-08-09

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