JPS5272583A - Cmosfet and bipolar transistor having defected crystal region - Google Patents

Cmosfet and bipolar transistor having defected crystal region

Info

Publication number
JPS5272583A
JPS5272583A JP51134744A JP13474476A JPS5272583A JP S5272583 A JPS5272583 A JP S5272583A JP 51134744 A JP51134744 A JP 51134744A JP 13474476 A JP13474476 A JP 13474476A JP S5272583 A JPS5272583 A JP S5272583A
Authority
JP
Japan
Prior art keywords
cmosfet
defected
bipolar transistor
crystal region
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51134744A
Other languages
English (en)
Japanese (ja)
Inventor
Aaru Poponiatsuku Maikeru
Ie Tsuushin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5272583A publication Critical patent/JPS5272583A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP51134744A 1975-12-12 1976-11-11 Cmosfet and bipolar transistor having defected crystal region Pending JPS5272583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64013775A 1975-12-12 1975-12-12

Publications (1)

Publication Number Publication Date
JPS5272583A true JPS5272583A (en) 1977-06-17

Family

ID=24566992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51134744A Pending JPS5272583A (en) 1975-12-12 1976-11-11 Cmosfet and bipolar transistor having defected crystal region

Country Status (5)

Country Link
JP (1) JPS5272583A (enExample)
DE (1) DE2642206A1 (enExample)
FR (1) FR2335045A1 (enExample)
GB (1) GB1503249A (enExample)
IT (1) IT1123671B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143563A (ja) * 1982-02-22 1983-08-26 Hitachi Ltd 半導体装置の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030856B1 (en) * 1979-12-13 1984-03-21 Fujitsu Limited Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell
NL8301554A (nl) * 1982-05-06 1983-12-01 Mitsubishi Electric Corp Geintegreerde schakeling-inrichting van het cmos-type.
JPS62219636A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体装置
WO1995006956A1 (en) * 1993-09-03 1995-03-09 National Semiconductor Corporation Planar isolation method for use in fabrication of microelectronics
JP2883017B2 (ja) * 1995-02-20 1999-04-19 ローム株式会社 半導体装置およびその製法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143563A (ja) * 1982-02-22 1983-08-26 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2335045B1 (enExample) 1979-09-21
IT1123671B (it) 1986-04-30
FR2335045A1 (fr) 1977-07-08
GB1503249A (en) 1978-03-08
DE2642206A1 (de) 1977-06-23

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