FR2335045B1 - - Google Patents
Info
- Publication number
- FR2335045B1 FR2335045B1 FR7632456A FR7632456A FR2335045B1 FR 2335045 B1 FR2335045 B1 FR 2335045B1 FR 7632456 A FR7632456 A FR 7632456A FR 7632456 A FR7632456 A FR 7632456A FR 2335045 B1 FR2335045 B1 FR 2335045B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/53—Physical imperfections the imperfections being within the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US64013775A | 1975-12-12 | 1975-12-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2335045A1 FR2335045A1 (fr) | 1977-07-08 |
| FR2335045B1 true FR2335045B1 (enExample) | 1979-09-21 |
Family
ID=24566992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7632456A Granted FR2335045A1 (fr) | 1975-12-12 | 1976-10-18 | Procede de commande de la duree de vie des porteurs dans les dispositifs semi-conducteurs et dispositifs en resultant |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5272583A (enExample) |
| DE (1) | DE2642206A1 (enExample) |
| FR (1) | FR2335045A1 (enExample) |
| GB (1) | GB1503249A (enExample) |
| IT (1) | IT1123671B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3067215D1 (en) * | 1979-12-13 | 1984-04-26 | Fujitsu Ltd | Charge-pumping semiconductor memory cell comprising a charge-storage region and memory device using such a cell |
| JPS58143563A (ja) * | 1982-02-22 | 1983-08-26 | Hitachi Ltd | 半導体装置の製造方法 |
| NL8301554A (nl) * | 1982-05-06 | 1983-12-01 | Mitsubishi Electric Corp | Geintegreerde schakeling-inrichting van het cmos-type. |
| JPS62219636A (ja) * | 1986-03-20 | 1987-09-26 | Hitachi Ltd | 半導体装置 |
| JPH09502303A (ja) * | 1993-09-03 | 1997-03-04 | ナショナル・セミコンダクター・コーポレイション | マイクロエレクトロニクスの製造に使用するための平坦な分離方法 |
| JP2883017B2 (ja) * | 1995-02-20 | 1999-04-19 | ローム株式会社 | 半導体装置およびその製法 |
-
1976
- 1976-09-20 DE DE19762642206 patent/DE2642206A1/de active Pending
- 1976-10-18 FR FR7632456A patent/FR2335045A1/fr active Granted
- 1976-11-09 IT IT29128/76A patent/IT1123671B/it active
- 1976-11-11 JP JP51134744A patent/JPS5272583A/ja active Pending
- 1976-12-06 GB GB50821/76A patent/GB1503249A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5272583A (en) | 1977-06-17 |
| FR2335045A1 (fr) | 1977-07-08 |
| GB1503249A (en) | 1978-03-08 |
| IT1123671B (it) | 1986-04-30 |
| DE2642206A1 (de) | 1977-06-23 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |