JPS5269585A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5269585A JPS5269585A JP14590075A JP14590075A JPS5269585A JP S5269585 A JPS5269585 A JP S5269585A JP 14590075 A JP14590075 A JP 14590075A JP 14590075 A JP14590075 A JP 14590075A JP S5269585 A JPS5269585 A JP S5269585A
- Authority
- JP
- Japan
- Prior art keywords
- adverse
- conductive
- hole
- semiconductor device
- substrete
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14590075A JPS5269585A (en) | 1975-12-09 | 1975-12-09 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14590075A JPS5269585A (en) | 1975-12-09 | 1975-12-09 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5269585A true JPS5269585A (en) | 1977-06-09 |
Family
ID=15395645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14590075A Pending JPS5269585A (en) | 1975-12-09 | 1975-12-09 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5269585A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5936971A (ja) * | 1982-08-26 | 1984-02-29 | Toyo Electric Mfg Co Ltd | 半導体装置の埋込みゲ−ト形成法 |
JPH02248046A (ja) * | 1989-03-22 | 1990-10-03 | Nec Corp | SiO↓2膜の形成方法 |
-
1975
- 1975-12-09 JP JP14590075A patent/JPS5269585A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5936971A (ja) * | 1982-08-26 | 1984-02-29 | Toyo Electric Mfg Co Ltd | 半導体装置の埋込みゲ−ト形成法 |
JPH02248046A (ja) * | 1989-03-22 | 1990-10-03 | Nec Corp | SiO↓2膜の形成方法 |
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