JPS5267926A - Voltage sensor circuit of semiconductor memory - Google Patents
Voltage sensor circuit of semiconductor memoryInfo
- Publication number
- JPS5267926A JPS5267926A JP50144522A JP14452275A JPS5267926A JP S5267926 A JPS5267926 A JP S5267926A JP 50144522 A JP50144522 A JP 50144522A JP 14452275 A JP14452275 A JP 14452275A JP S5267926 A JPS5267926 A JP S5267926A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- voltage sensor
- sensor circuit
- circuit
- deforming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50144522A JPS5818711B2 (ja) | 1975-12-03 | 1975-12-03 | ハンドウタイキオクソウチノ デンアツセンスカイロ |
US05/680,236 US4103345A (en) | 1975-04-28 | 1976-04-26 | Semiconductor memory with data detection circuit |
DE2618760A DE2618760C3 (de) | 1975-04-28 | 1976-04-28 | Halbleiter-Speichervorrichtung |
GB17236/76A GB1522753A (en) | 1975-04-28 | 1976-04-28 | Semiconductor memory device |
FR7612595A FR2309953A1 (fr) | 1975-04-28 | 1976-04-28 | Memoire a semi-conducteur utilisant des transistors a effet de champ complementaires |
MY1981312A MY8100312A (en) | 1975-04-28 | 1981-12-31 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50144522A JPS5818711B2 (ja) | 1975-12-03 | 1975-12-03 | ハンドウタイキオクソウチノ デンアツセンスカイロ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5267926A true JPS5267926A (en) | 1977-06-06 |
JPS5818711B2 JPS5818711B2 (ja) | 1983-04-14 |
Family
ID=15364285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50144522A Expired JPS5818711B2 (ja) | 1975-04-28 | 1975-12-03 | ハンドウタイキオクソウチノ デンアツセンスカイロ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5818711B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5429531A (en) * | 1977-08-09 | 1979-03-05 | Sharp Corp | Sense circuit for cmos static random access memory |
JPS57129484A (en) * | 1981-02-03 | 1982-08-11 | Mitsubishi Electric Corp | Liquid crystal display device |
-
1975
- 1975-12-03 JP JP50144522A patent/JPS5818711B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5429531A (en) * | 1977-08-09 | 1979-03-05 | Sharp Corp | Sense circuit for cmos static random access memory |
JPS57129484A (en) * | 1981-02-03 | 1982-08-11 | Mitsubishi Electric Corp | Liquid crystal display device |
Also Published As
Publication number | Publication date |
---|---|
JPS5818711B2 (ja) | 1983-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5267926A (en) | Voltage sensor circuit of semiconductor memory | |
JPS5223251A (en) | Semiconductor circuit | |
JPS5364434A (en) | Sense circuit of mos semiconductor memory | |
JPS5242167A (en) | Semiconductor pressure gauge | |
JPS5336468A (en) | Package for integrated circuit | |
JPS5370768A (en) | Integrated circuit | |
JPS5237780A (en) | Integrated composite semiconductor device | |
JPS5359851A (en) | Constant current circuit | |
JPS5371588A (en) | Manufacture of semiconductor memory device | |
JPS5278389A (en) | Semiconductor memory device | |
JPS5357878A (en) | Peak value detector | |
JPS51114883A (en) | Mos variable capacitance element incorporated in ic | |
JPS538529A (en) | Refreshing method for semiconductor memory | |
JPS5344182A (en) | Semiconductor device | |
JPS51121279A (en) | Junction breakdown type semiconductor memory device | |
JPS5339024A (en) | Semiconductor memory unit | |
JPS528878A (en) | Semiconductor negative pressure sensor | |
JPS53102681A (en) | Stabilizing method for self substrate bias level | |
JPS51142932A (en) | Semiconductor memory devices | |
JPS5287381A (en) | Humidity sensitive element | |
JPS5222443A (en) | Method of checking refresh operation | |
JPS51138166A (en) | Production method of semiconductor device | |
JPS526036A (en) | Semiconductor memory circuit | |
JPS51137353A (en) | Amplitude limiting circuit | |
JPS52150984A (en) | Semiconductor device |