JPS524785A - Apparatus making fine holes between opposing two faces of semiconductors - Google Patents

Apparatus making fine holes between opposing two faces of semiconductors

Info

Publication number
JPS524785A
JPS524785A JP7630576A JP7630576A JPS524785A JP S524785 A JPS524785 A JP S524785A JP 7630576 A JP7630576 A JP 7630576A JP 7630576 A JP7630576 A JP 7630576A JP S524785 A JPS524785 A JP S524785A
Authority
JP
Japan
Prior art keywords
semiconductors
opposing
faces
fine holes
making fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7630576A
Other languages
English (en)
Japanese (ja)
Inventor
Boo Kurisuchiyan
Raberudei Iban
Ruujiyo Anri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS524785A publication Critical patent/JPS524785A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7630576A 1975-06-27 1976-06-28 Apparatus making fine holes between opposing two faces of semiconductors Pending JPS524785A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7520398A FR2315763A1 (fr) 1975-06-27 1975-06-27 Installation de realisation de micro-canaux dans un corps semi-conducteur, en particulier de micro-canaux multiplicateurs d'electrons

Publications (1)

Publication Number Publication Date
JPS524785A true JPS524785A (en) 1977-01-14

Family

ID=9157238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7630576A Pending JPS524785A (en) 1975-06-27 1976-06-28 Apparatus making fine holes between opposing two faces of semiconductors

Country Status (4)

Country Link
JP (1) JPS524785A (enrdf_load_stackoverflow)
DE (1) DE2628381B2 (enrdf_load_stackoverflow)
FR (1) FR2315763A1 (enrdf_load_stackoverflow)
GB (1) GB1530509A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488772A (en) * 1977-12-26 1979-07-14 Nec Corp Local etching method for semiconductor device
JPS5513960A (en) * 1978-07-17 1980-01-31 Nec Corp Mesa forming method
JP2006323353A (ja) * 2006-01-26 2006-11-30 Matsushita Electric Works Ltd 半導体レンズの製造方法
JP2007086805A (ja) * 2005-08-26 2007-04-05 Matsushita Electric Works Ltd 半導体レンズの製造方法
JP2007108776A (ja) * 2005-08-26 2007-04-26 Matsushita Electric Works Ltd 半導体レンズの製造方法
JP2007108777A (ja) * 2005-08-26 2007-04-26 Matsushita Electric Works Ltd 半導体レンズの製造方法
JP2007226197A (ja) * 2005-05-18 2007-09-06 Matsushita Electric Works Ltd 曲面の形成方法
JP2007226198A (ja) * 2005-05-18 2007-09-06 Matsushita Electric Works Ltd 曲面の形成方法
JP2007292720A (ja) * 2006-03-28 2007-11-08 Matsushita Electric Works Ltd 半導体レンズおよびそれを用いた赤外線検出装置、半導体レンズの製造方法
JP2008134343A (ja) * 2006-11-27 2008-06-12 Matsushita Electric Works Ltd 半導体レンズおよびその製造方法
US7749868B2 (en) 2005-05-18 2010-07-06 Panasonic Electric Works Co., Ltd. Process of forming a curved profile on a semiconductor substrate
JP2011176169A (ja) * 2010-02-25 2011-09-08 Tokyo Electron Ltd 基板のエッチング方法、プログラム及びコンピュータ記憶媒体
US8313632B2 (en) 2005-05-18 2012-11-20 Panasonic Corporation Process of making an optical lens

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6387247B1 (en) 1999-09-03 2002-05-14 Shell Oil Company Feed injection system for catalytic cracking process
JPWO2002075800A1 (ja) * 2001-03-19 2004-07-08 三菱電機株式会社 電気化学エッチング装置及びその方法並びにその製造物

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5488772A (en) * 1977-12-26 1979-07-14 Nec Corp Local etching method for semiconductor device
JPS5513960A (en) * 1978-07-17 1980-01-31 Nec Corp Mesa forming method
JP2007226197A (ja) * 2005-05-18 2007-09-06 Matsushita Electric Works Ltd 曲面の形成方法
US8313632B2 (en) 2005-05-18 2012-11-20 Panasonic Corporation Process of making an optical lens
US7749868B2 (en) 2005-05-18 2010-07-06 Panasonic Electric Works Co., Ltd. Process of forming a curved profile on a semiconductor substrate
JP2007226198A (ja) * 2005-05-18 2007-09-06 Matsushita Electric Works Ltd 曲面の形成方法
JP2007086805A (ja) * 2005-08-26 2007-04-05 Matsushita Electric Works Ltd 半導体レンズの製造方法
JP2007108777A (ja) * 2005-08-26 2007-04-26 Matsushita Electric Works Ltd 半導体レンズの製造方法
JP2007108776A (ja) * 2005-08-26 2007-04-26 Matsushita Electric Works Ltd 半導体レンズの製造方法
JP2006323353A (ja) * 2006-01-26 2006-11-30 Matsushita Electric Works Ltd 半導体レンズの製造方法
JP2007292720A (ja) * 2006-03-28 2007-11-08 Matsushita Electric Works Ltd 半導体レンズおよびそれを用いた赤外線検出装置、半導体レンズの製造方法
JP2008134343A (ja) * 2006-11-27 2008-06-12 Matsushita Electric Works Ltd 半導体レンズおよびその製造方法
JP2011176169A (ja) * 2010-02-25 2011-09-08 Tokyo Electron Ltd 基板のエッチング方法、プログラム及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
DE2628381A1 (de) 1976-12-30
DE2628381C3 (enrdf_load_stackoverflow) 1979-07-12
FR2315763A1 (fr) 1977-01-21
DE2628381B2 (de) 1978-11-16
GB1530509A (en) 1978-11-01
FR2315763B1 (enrdf_load_stackoverflow) 1979-02-02

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