JPS5244532A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5244532A
JPS5244532A JP50121036A JP12103675A JPS5244532A JP S5244532 A JPS5244532 A JP S5244532A JP 50121036 A JP50121036 A JP 50121036A JP 12103675 A JP12103675 A JP 12103675A JP S5244532 A JPS5244532 A JP S5244532A
Authority
JP
Japan
Prior art keywords
cell
semiconductor memory
case
made active
yield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50121036A
Other languages
Japanese (ja)
Other versions
JPS5615074B2 (en
Inventor
Akisuke Mori
Kuniaki Makabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50121036A priority Critical patent/JPS5244532A/en
Publication of JPS5244532A publication Critical patent/JPS5244532A/en
Publication of JPS5615074B2 publication Critical patent/JPS5615074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:In case IIL memory cell is arranged in many-matrix pattern, the cell is produced after changed into inactive state. When the product is good, the cell is made active; while in case of defective cell, the auxiliary cell is made active. Thus, the yield can be improved.
JP50121036A 1975-10-07 1975-10-07 Semiconductor memory Granted JPS5244532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50121036A JPS5244532A (en) 1975-10-07 1975-10-07 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50121036A JPS5244532A (en) 1975-10-07 1975-10-07 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5244532A true JPS5244532A (en) 1977-04-07
JPS5615074B2 JPS5615074B2 (en) 1981-04-08

Family

ID=14801221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50121036A Granted JPS5244532A (en) 1975-10-07 1975-10-07 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5244532A (en)

Also Published As

Publication number Publication date
JPS5615074B2 (en) 1981-04-08

Similar Documents

Publication Publication Date Title
JPS5240062A (en) Process for production of semiconductor devices
JPS51145276A (en) Semiconductor device
JPS5244532A (en) Semiconductor memory
JPS51122383A (en) Semiconductor memory
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS51148385A (en) Semiconductor memory cell
JPS5210032A (en) Construction method of semiconductor memory unit
JPS5368182A (en) Production of semiconductor memory device
JPS5334430A (en) Memory unit
JPS51118391A (en) Manufacturing process for semiconducter unit
JPS5261933A (en) Memory unit
JPS5271139A (en) Semiconductor memory
JPS5274280A (en) Semiconductor device and its production
JPS5227326A (en) Manufacturing method of semiconductor memory device containing stand-b y memory cell
JPS5219975A (en) Semiconductor device
JPS5227228A (en) Semiconductor memory
JPS5257741A (en) Semiconductor memory
JPS53143186A (en) Production of semiconductor device
JPS5278327A (en) Semiconductor memory
JPS531428A (en) Semiconductor memory
JPS538581A (en) Semiconductor memory unit
JPS5327357A (en) Direct heating cathode
JPS5217782A (en) Solar cell for watch power supply
JPS5258327A (en) Semiconductor memory unit
JPS51112266A (en) Semiconductor device production method