JPS5243381A - Information memory for storing information as charge and method of driving same - Google Patents
Information memory for storing information as charge and method of driving sameInfo
- Publication number
- JPS5243381A JPS5243381A JP51117884A JP11788476A JPS5243381A JP S5243381 A JPS5243381 A JP S5243381A JP 51117884 A JP51117884 A JP 51117884A JP 11788476 A JP11788476 A JP 11788476A JP S5243381 A JPS5243381 A JP S5243381A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- information
- driving same
- storing information
- information memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/335—Channel regions of field-effect devices of charge-coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2543628A DE2543628C2 (de) | 1975-09-30 | 1975-09-30 | Halbleiterbauelement zum Speichern von Information in Form von elektrischen Ladungen, Verfahren zu seinem Betrieb und Informatiosspeicher mit solchen Halbleiterbauelementen |
DE2543677A DE2543677C3 (de) | 1975-09-30 | 1975-09-30 | Dynamisches Halbleiterspeicherelement und Verfahren zu dessen Betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5243381A true JPS5243381A (en) | 1977-04-05 |
JPS6348187B2 JPS6348187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-09-28 |
Family
ID=25769458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51117884A Granted JPS5243381A (en) | 1975-09-30 | 1976-09-30 | Information memory for storing information as charge and method of driving same |
Country Status (5)
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162458A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor device |
JPH0661465A (ja) * | 1992-08-11 | 1994-03-04 | Mitsubishi Electric Corp | 赤外線撮像素子 |
CN105953975A (zh) * | 2016-07-19 | 2016-09-21 | 农业部南京农业机械化研究所 | 砝码杠杆式可移动静标定装置及标定方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2006523B (en) * | 1977-10-13 | 1982-12-01 | Mohsen A M | Dynamic ram memory and vertical charge coupled dynamic storage cell therefor |
DE2842588A1 (de) * | 1978-09-29 | 1980-04-17 | Siemens Ag | Hochintegrierbares, dynamisches speicherelement |
NL8003874A (nl) * | 1980-07-04 | 1982-02-01 | Philips Nv | Veldeffektcapaciteit. |
JPS59154077A (ja) * | 1983-02-23 | 1984-09-03 | Clarion Co Ltd | 可変容量素子 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES404184A1 (es) * | 1971-07-06 | 1975-06-01 | Ibm | Una disposicion de celula de memoria de acceso casual para calculadoras digitales. |
-
1976
- 1976-09-13 FR FR7627472A patent/FR2326761A1/fr active Granted
- 1976-09-27 NL NL7610696A patent/NL7610696A/xx not_active Application Discontinuation
- 1976-09-28 GB GB40151/76A patent/GB1564617A/en not_active Expired
- 1976-09-29 IT IT27758/76A patent/IT1072548B/it active
- 1976-09-30 JP JP51117884A patent/JPS5243381A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162458A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor device |
JPH0661465A (ja) * | 1992-08-11 | 1994-03-04 | Mitsubishi Electric Corp | 赤外線撮像素子 |
CN105953975A (zh) * | 2016-07-19 | 2016-09-21 | 农业部南京农业机械化研究所 | 砝码杠杆式可移动静标定装置及标定方法 |
Also Published As
Publication number | Publication date |
---|---|
IT1072548B (it) | 1985-04-10 |
FR2326761A1 (fr) | 1977-04-29 |
FR2326761B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-10-20 |
NL7610696A (nl) | 1977-04-01 |
GB1564617A (en) | 1980-04-10 |
JPS6348187B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-09-28 |
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