JPS5241177B2 - - Google Patents
Info
- Publication number
- JPS5241177B2 JPS5241177B2 JP49119516A JP11951674A JPS5241177B2 JP S5241177 B2 JPS5241177 B2 JP S5241177B2 JP 49119516 A JP49119516 A JP 49119516A JP 11951674 A JP11951674 A JP 11951674A JP S5241177 B2 JPS5241177 B2 JP S5241177B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2356301A DE2356301C3 (de) | 1973-11-10 | 1973-11-10 | Monolithisch integrierte, logische Schaltung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5081257A JPS5081257A (ja) | 1975-07-01 |
| JPS5241177B2 true JPS5241177B2 (ja) | 1977-10-17 |
Family
ID=5897791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49119516A Expired JPS5241177B2 (ja) | 1973-11-10 | 1974-10-18 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3916218A (ja) |
| JP (1) | JPS5241177B2 (ja) |
| DE (1) | DE2356301C3 (ja) |
| FR (1) | FR2258059B1 (ja) |
| GB (1) | GB1448914A (ja) |
| IT (1) | IT1022970B (ja) |
| NL (1) | NL7413098A (ja) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2538910C3 (de) * | 1975-09-02 | 1980-01-10 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Schaltungsanordnung zur Erhöhung der Schaltgeschwindigkeit einer integrierten Schaltung |
| US4057894A (en) * | 1976-02-09 | 1977-11-15 | Rca Corporation | Controllably valued resistor |
| DE2612666C2 (de) * | 1976-03-25 | 1982-11-18 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte, invertierende logische Schaltung |
| US4140920A (en) * | 1976-08-27 | 1979-02-20 | Signetics Corporation | Multivalued integrated injection logic circuitry and method |
| US4053923A (en) * | 1976-09-23 | 1977-10-11 | Motorola, Inc. | Integrated logic elements with improved speed-power characteristics |
| FR2375722A1 (fr) * | 1976-12-21 | 1978-07-21 | Thomson Csf | Element logique a faible consommation |
| SU619066A1 (ru) * | 1977-01-06 | 1979-03-15 | Предприятие П/Я В-2892 | Интегральный логический элемент |
| US4547766A (en) * | 1977-04-07 | 1985-10-15 | Analog Device, Incorporated | A-To-D converter of the successive-approximation type |
| US4400689A (en) * | 1977-04-07 | 1983-08-23 | Analog Devices, Incorporated | A-to-D Converter of the successive-approximation type |
| US4178584A (en) * | 1978-01-23 | 1979-12-11 | Motorola, Inc. | Integrated injection logic digital-to-analog converter employing feedback regulation and method |
| US4240846A (en) * | 1978-06-27 | 1980-12-23 | Harris Corporation | Method of fabricating up diffused substrate FED logic utilizing a two-step epitaxial deposition |
| US4400690A (en) * | 1978-08-08 | 1983-08-23 | Analog Devices, Incorporated | A-to-D Converter of the successive-approximation type |
| US4306159A (en) * | 1979-06-14 | 1981-12-15 | International Business Machines Corporation | Bipolar inverter and NAND logic circuit with extremely low DC standby power |
| JPS5632762A (en) * | 1979-08-27 | 1981-04-02 | Fujitsu Ltd | Semiconductor device |
| US4598383A (en) * | 1981-12-28 | 1986-07-01 | Texas Instruments Incorporated | Combination of a data processor with a switch means |
| US4629912A (en) * | 1982-02-02 | 1986-12-16 | Fairchild Camera And Instrument Corp. | Schottky shunt integrated injection |
| SE433787B (sv) * | 1983-07-15 | 1984-06-12 | Ericsson Telefon Ab L M | Multipel transistor med gemensam emitter och sparata kollektorer |
| US4641047A (en) * | 1984-07-02 | 1987-02-03 | Motorola, Inc. | Complex direct coupled transistor logic |
| US5021856A (en) * | 1989-03-15 | 1991-06-04 | Plessey Overseas Limited | Universal cell for bipolar NPN and PNP transistors and resistive elements |
| KR19990072936A (ko) * | 1998-02-27 | 1999-09-27 | 가나이 쓰도무 | 아이솔레이터및그것을사용하는모뎀장치 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2021824C3 (de) * | 1970-05-05 | 1980-08-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische Halbleiterschaltung |
| DE2212168C2 (de) * | 1972-03-14 | 1982-10-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiteranordnung |
-
1973
- 1973-11-10 DE DE2356301A patent/DE2356301C3/de not_active Expired
-
1974
- 1974-07-15 US US488344A patent/US3916218A/en not_active Expired - Lifetime
- 1974-09-16 FR FR7432942A patent/FR2258059B1/fr not_active Expired
- 1974-09-25 GB GB4164574A patent/GB1448914A/en not_active Expired
- 1974-10-04 NL NL7413098A patent/NL7413098A/xx not_active Application Discontinuation
- 1974-10-18 IT IT28565/74A patent/IT1022970B/it active
- 1974-10-18 JP JP49119516A patent/JPS5241177B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2356301A1 (de) | 1975-05-22 |
| NL7413098A (nl) | 1975-05-13 |
| JPS5081257A (ja) | 1975-07-01 |
| FR2258059B1 (ja) | 1976-10-22 |
| US3916218A (en) | 1975-10-28 |
| DE2356301C3 (de) | 1982-03-11 |
| GB1448914A (en) | 1976-09-08 |
| IT1022970B (it) | 1978-04-20 |
| DE2356301B2 (de) | 1981-07-02 |
| FR2258059A1 (ja) | 1975-08-08 |