JPS5239389B2 - - Google Patents
Info
- Publication number
- JPS5239389B2 JPS5239389B2 JP47088029A JP8802972A JPS5239389B2 JP S5239389 B2 JPS5239389 B2 JP S5239389B2 JP 47088029 A JP47088029 A JP 47088029A JP 8802972 A JP8802972 A JP 8802972A JP S5239389 B2 JPS5239389 B2 JP S5239389B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18004171A | 1971-09-13 | 1971-09-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4840374A JPS4840374A (https=) | 1973-06-13 |
| JPS5239389B2 true JPS5239389B2 (https=) | 1977-10-05 |
Family
ID=22658988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47088029A Expired JPS5239389B2 (https=) | 1971-09-13 | 1972-09-04 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3796548A (https=) |
| JP (1) | JPS5239389B2 (https=) |
| DE (1) | DE2241710C3 (https=) |
| FR (1) | FR2154458B1 (https=) |
| GB (1) | GB1343384A (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3944393A (en) * | 1973-11-21 | 1976-03-16 | Monsanto Company | Apparatus for horizontal production of single crystal structure |
| JPS5276926U (https=) * | 1975-12-08 | 1977-06-08 | ||
| GB1577413A (en) * | 1976-03-17 | 1980-10-22 | Metals Research Ltd | Growth of crystalline material |
| FR2383728A1 (fr) * | 1977-03-16 | 1978-10-13 | Radiotechnique Compelec | Perfectionnement a un procede de realisation d'un lingot de materiau cristallin |
| JPS5722149U (https=) * | 1980-07-15 | 1982-02-04 | ||
| JPS5722150U (https=) * | 1980-07-15 | 1982-02-04 | ||
| JPS6050759B2 (ja) * | 1982-07-14 | 1985-11-09 | 財団法人 半導体研究振興会 | ＺｎＳｅのエピタキシヤル成長法及び成長装置 |
| JPS6090890A (ja) * | 1983-10-24 | 1985-05-22 | Mitsubishi Monsanto Chem Co | 無機化合物単結晶の成長方法及び単結晶成長用ボ−ト |
| US4764350A (en) * | 1986-10-08 | 1988-08-16 | The United States Of America As Represented By The Secretary Of The Air Force | Method and apparatus for synthesizing a single crystal of indium phosphide |
| FR2614322B1 (fr) * | 1987-04-27 | 1989-07-28 | Europ Propulsion | Four a gradient destine a la solidification orientee, notamment par la methode de bridgmann. |
| US5248377A (en) * | 1989-12-01 | 1993-09-28 | Grumman Aerospace Corporation | Crystal-growth furnace for interface curvature control |
| CN105297130A (zh) * | 2014-06-03 | 2016-02-03 | 长春理工大学 | 下降法定向生长氟化物晶体的方法及装置 |
| CN108546986B (zh) * | 2018-04-19 | 2020-09-15 | 中国科学院半导体研究所 | 籽晶保护装置及单晶生长方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL225605A (https=) * | 1957-03-07 | 1900-01-01 | ||
| US3124489A (en) * | 1960-05-02 | 1964-03-10 | Method of continuously growing thin strip crystals | |
| US3156533A (en) * | 1960-07-26 | 1964-11-10 | Imber Oscar | Crystal growth apparatus |
| DE1303150B (https=) * | 1961-01-13 | 1971-05-13 | Philips Nv | |
| US3198606A (en) * | 1961-01-23 | 1965-08-03 | Ibm | Apparatus for growing crystals |
| US3240568A (en) * | 1961-12-20 | 1966-03-15 | Monsanto Co | Process and apparatus for the production of single crystal compounds |
| US3401022A (en) * | 1964-03-26 | 1968-09-10 | Motorola Inc | Apparatus for horizontal zone refining of semiconductive materials |
| US3453352A (en) * | 1964-12-14 | 1969-07-01 | Texas Instruments Inc | Method and apparatus for producing crystalline semiconductor ribbon |
| US3464812A (en) * | 1966-03-29 | 1969-09-02 | Massachusetts Inst Technology | Process for making solids and products thereof |
| US3520810A (en) * | 1968-01-15 | 1970-07-21 | Ibm | Manufacture of single crystal semiconductors |
| US3617223A (en) * | 1968-05-21 | 1971-11-02 | Texas Instruments Inc | Apparatus for forming monocrystalline ribbons of silicon |
| US3607054A (en) * | 1969-05-05 | 1971-09-21 | Us Army | Method for extending the growth of vapor-liquid-solid grown crystals |
-
1971
- 1971-09-13 US US00180041A patent/US3796548A/en not_active Expired - Lifetime
-
1972
- 1972-07-28 GB GB3535172A patent/GB1343384A/en not_active Expired
- 1972-08-24 DE DE2241710A patent/DE2241710C3/de not_active Expired
- 1972-08-29 FR FR7231321A patent/FR2154458B1/fr not_active Expired
- 1972-09-04 JP JP47088029A patent/JPS5239389B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2241710A1 (de) | 1973-03-22 |
| GB1343384A (en) | 1974-01-10 |
| FR2154458B1 (https=) | 1978-08-04 |
| JPS4840374A (https=) | 1973-06-13 |
| FR2154458A1 (https=) | 1973-05-11 |
| DE2241710B2 (de) | 1980-03-06 |
| DE2241710C3 (de) | 1980-10-23 |
| US3796548A (en) | 1974-03-12 |