JPS5231713B2 - - Google Patents

Info

Publication number
JPS5231713B2
JPS5231713B2 JP49092043A JP9204374A JPS5231713B2 JP S5231713 B2 JPS5231713 B2 JP S5231713B2 JP 49092043 A JP49092043 A JP 49092043A JP 9204374 A JP9204374 A JP 9204374A JP S5231713 B2 JPS5231713 B2 JP S5231713B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49092043A
Other versions
JPS5060185A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5060185A publication Critical patent/JPS5060185A/ja
Publication of JPS5231713B2 publication Critical patent/JPS5231713B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP49092043A 1973-09-21 1974-08-13 Expired JPS5231713B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US399668A US3874959A (en) 1973-09-21 1973-09-21 Method to establish the endpoint during the delineation of oxides on semiconductor surfaces and apparatus therefor

Publications (2)

Publication Number Publication Date
JPS5060185A JPS5060185A (ja) 1975-05-23
JPS5231713B2 true JPS5231713B2 (ja) 1977-08-16

Family

ID=23580485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49092043A Expired JPS5231713B2 (ja) 1973-09-21 1974-08-13

Country Status (6)

Country Link
US (1) US3874959A (ja)
JP (1) JPS5231713B2 (ja)
DE (1) DE2439795C3 (ja)
FR (1) FR2245083B1 (ja)
GB (1) GB1448048A (ja)
IT (1) IT1017115B (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953265A (en) * 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
US4039370A (en) * 1975-06-23 1977-08-02 Rca Corporation Optically monitoring the undercutting of a layer being etched
US4058438A (en) * 1975-07-18 1977-11-15 The United States Of America As Represented By The Secretary Of The Army Rapid universal sensing cell
US4082602A (en) * 1977-05-02 1978-04-04 Bell Telephone Laboratories, Incorporated Photovoltaic cell manufacture
US4142107A (en) * 1977-06-30 1979-02-27 International Business Machines Corporation Resist development control system
DE3068851D1 (en) * 1979-05-02 1984-09-13 Ibm Apparatus and process for selective electrochemical etching
JPS56501226A (ja) * 1979-08-30 1981-08-27
GB2130970B (en) * 1980-12-05 1985-01-30 Burroughs Corp Etching depth monitor
JPS58141531A (ja) * 1982-02-18 1983-08-22 Toshiba Corp 半導体素子用金属薄膜エツチング装置
US4569717A (en) * 1983-05-24 1986-02-11 Dainippon Screen Mfg. Co., Ltd. Method of surface treatment
EP0171195B1 (en) * 1984-07-09 1991-01-02 Sigma Corporation Method for detecting endpoint of development
HU199020B (en) * 1987-05-04 1989-12-28 Magyar Tudomanyos Akademia Method and apparatus for measuring the layer thickness of semiconductor layer structures
US4793895A (en) * 1988-01-25 1988-12-27 Ibm Corporation In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
DE3823137C2 (de) * 1988-07-05 1993-12-02 Schering Ag Verfahren zur Ätzung von Epoxid-Harz
US5308438A (en) * 1992-01-30 1994-05-03 International Business Machines Corporation Endpoint detection apparatus and method for chemical/mechanical polishing
US5376214A (en) * 1992-09-22 1994-12-27 Nissan Motor Co., Ltd. Etching device
US5788801A (en) * 1992-12-04 1998-08-04 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5573624A (en) * 1992-12-04 1996-11-12 International Business Machines Corporation Chemical etch monitor for measuring film etching uniformity during a chemical etching process
US5582746A (en) * 1992-12-04 1996-12-10 International Business Machines Corporation Real time measurement of etch rate during a chemical etching process
US5439551A (en) * 1994-03-02 1995-08-08 Micron Technology, Inc. Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes
US5516399A (en) * 1994-06-30 1996-05-14 International Business Machines Corporation Contactless real-time in-situ monitoring of a chemical etching
US5501766A (en) * 1994-06-30 1996-03-26 International Business Machines Corporation Minimizing overetch during a chemical etching process
US5489361A (en) * 1994-06-30 1996-02-06 International Business Machines Corporation Measuring film etching uniformity during a chemical etching process
US5445705A (en) * 1994-06-30 1995-08-29 International Business Machines Corporation Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process
US5480511A (en) * 1994-06-30 1996-01-02 International Business Machines Corporation Method for contactless real-time in-situ monitoring of a chemical etching process
US6411110B1 (en) * 1999-08-17 2002-06-25 Micron Technology, Inc. Apparatuses and methods for determining if protective coatings on semiconductor substrate holding devices have been compromised

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3162589A (en) * 1954-06-01 1964-12-22 Rca Corp Methods of making semiconductor devices
US2875141A (en) * 1954-08-12 1959-02-24 Philco Corp Method and apparatus for use in forming semiconductive structures
CH444975A (de) * 1966-09-27 1967-10-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone
US3628017A (en) * 1970-06-18 1971-12-14 Itek Corp Ultraviolet light-sensitive cell using a substantially chemically unchanged semiconductor electrode in an electrolyte
US3755026A (en) * 1971-04-01 1973-08-28 Sprague Electric Co Method of making a semiconductor device having tunnel oxide contacts

Also Published As

Publication number Publication date
FR2245083A1 (ja) 1975-04-18
GB1448048A (en) 1976-09-02
DE2439795C3 (de) 1981-09-17
JPS5060185A (ja) 1975-05-23
FR2245083B1 (ja) 1977-03-18
US3874959A (en) 1975-04-01
DE2439795A1 (de) 1975-04-03
DE2439795B2 (de) 1981-01-22
IT1017115B (it) 1977-07-20

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