IT1017115B - Apparecchiatura per segnalare il completamento di un operazione di attacco chimico nella fabbricazio ne di dispositivi semiconduttori - Google Patents
Apparecchiatura per segnalare il completamento di un operazione di attacco chimico nella fabbricazio ne di dispositivi semiconduttoriInfo
- Publication number
- IT1017115B IT1017115B IT25102/74A IT2510274A IT1017115B IT 1017115 B IT1017115 B IT 1017115B IT 25102/74 A IT25102/74 A IT 25102/74A IT 2510274 A IT2510274 A IT 2510274A IT 1017115 B IT1017115 B IT 1017115B
- Authority
- IT
- Italy
- Prior art keywords
- reporting
- completion
- manufacture
- equipment
- chemical attack
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US399668A US3874959A (en) | 1973-09-21 | 1973-09-21 | Method to establish the endpoint during the delineation of oxides on semiconductor surfaces and apparatus therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1017115B true IT1017115B (it) | 1977-07-20 |
Family
ID=23580485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT25102/74A IT1017115B (it) | 1973-09-21 | 1974-07-12 | Apparecchiatura per segnalare il completamento di un operazione di attacco chimico nella fabbricazio ne di dispositivi semiconduttori |
Country Status (6)
Country | Link |
---|---|
US (1) | US3874959A (it) |
JP (1) | JPS5231713B2 (it) |
DE (1) | DE2439795C3 (it) |
FR (1) | FR2245083B1 (it) |
GB (1) | GB1448048A (it) |
IT (1) | IT1017115B (it) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953265A (en) * | 1975-04-28 | 1976-04-27 | International Business Machines Corporation | Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers |
US4039370A (en) * | 1975-06-23 | 1977-08-02 | Rca Corporation | Optically monitoring the undercutting of a layer being etched |
US4058438A (en) * | 1975-07-18 | 1977-11-15 | The United States Of America As Represented By The Secretary Of The Army | Rapid universal sensing cell |
US4082602A (en) * | 1977-05-02 | 1978-04-04 | Bell Telephone Laboratories, Incorporated | Photovoltaic cell manufacture |
US4142107A (en) * | 1977-06-30 | 1979-02-27 | International Business Machines Corporation | Resist development control system |
EP0018556B1 (de) * | 1979-05-02 | 1984-08-08 | International Business Machines Corporation | Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen |
WO1981000646A1 (en) * | 1979-08-30 | 1981-03-05 | Western Electric Co | Device manufacture involving pattern delineation in thin layers |
GB2130970B (en) * | 1980-12-05 | 1985-01-30 | Burroughs Corp | Etching depth monitor |
JPS58141531A (ja) * | 1982-02-18 | 1983-08-22 | Toshiba Corp | 半導体素子用金属薄膜エツチング装置 |
US4569717A (en) * | 1983-05-24 | 1986-02-11 | Dainippon Screen Mfg. Co., Ltd. | Method of surface treatment |
US4621037A (en) * | 1984-07-09 | 1986-11-04 | Sigma Corporation | Method for detecting endpoint of development |
HU199020B (en) * | 1987-05-04 | 1989-12-28 | Magyar Tudomanyos Akademia | Method and apparatus for measuring the layer thickness of semiconductor layer structures |
US4793895A (en) * | 1988-01-25 | 1988-12-27 | Ibm Corporation | In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection |
DE3823137C2 (de) * | 1988-07-05 | 1993-12-02 | Schering Ag | Verfahren zur Ätzung von Epoxid-Harz |
US5308438A (en) * | 1992-01-30 | 1994-05-03 | International Business Machines Corporation | Endpoint detection apparatus and method for chemical/mechanical polishing |
US5376214A (en) * | 1992-09-22 | 1994-12-27 | Nissan Motor Co., Ltd. | Etching device |
US5788801A (en) * | 1992-12-04 | 1998-08-04 | International Business Machines Corporation | Real time measurement of etch rate during a chemical etching process |
US5582746A (en) * | 1992-12-04 | 1996-12-10 | International Business Machines Corporation | Real time measurement of etch rate during a chemical etching process |
US5573624A (en) * | 1992-12-04 | 1996-11-12 | International Business Machines Corporation | Chemical etch monitor for measuring film etching uniformity during a chemical etching process |
US5439551A (en) * | 1994-03-02 | 1995-08-08 | Micron Technology, Inc. | Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes |
US5480511A (en) * | 1994-06-30 | 1996-01-02 | International Business Machines Corporation | Method for contactless real-time in-situ monitoring of a chemical etching process |
US5445705A (en) * | 1994-06-30 | 1995-08-29 | International Business Machines Corporation | Method and apparatus for contactless real-time in-situ monitoring of a chemical etching process |
US5489361A (en) * | 1994-06-30 | 1996-02-06 | International Business Machines Corporation | Measuring film etching uniformity during a chemical etching process |
US5516399A (en) * | 1994-06-30 | 1996-05-14 | International Business Machines Corporation | Contactless real-time in-situ monitoring of a chemical etching |
US5501766A (en) * | 1994-06-30 | 1996-03-26 | International Business Machines Corporation | Minimizing overetch during a chemical etching process |
US6411110B1 (en) * | 1999-08-17 | 2002-06-25 | Micron Technology, Inc. | Apparatuses and methods for determining if protective coatings on semiconductor substrate holding devices have been compromised |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3162589A (en) * | 1954-06-01 | 1964-12-22 | Rca Corp | Methods of making semiconductor devices |
US2875141A (en) * | 1954-08-12 | 1959-02-24 | Philco Corp | Method and apparatus for use in forming semiconductive structures |
CH444975A (de) * | 1966-09-27 | 1967-10-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung eines Halbleiterelementes mit pnpn-Struktur mit Kurzschlüssen in der Emitterzone |
US3628017A (en) * | 1970-06-18 | 1971-12-14 | Itek Corp | Ultraviolet light-sensitive cell using a substantially chemically unchanged semiconductor electrode in an electrolyte |
US3755026A (en) * | 1971-04-01 | 1973-08-28 | Sprague Electric Co | Method of making a semiconductor device having tunnel oxide contacts |
-
1973
- 1973-09-21 US US399668A patent/US3874959A/en not_active Expired - Lifetime
-
1974
- 1974-07-12 IT IT25102/74A patent/IT1017115B/it active
- 1974-07-30 GB GB3349974A patent/GB1448048A/en not_active Expired
- 1974-08-08 FR FR7428143A patent/FR2245083B1/fr not_active Expired
- 1974-08-13 JP JP49092043A patent/JPS5231713B2/ja not_active Expired
- 1974-08-20 DE DE2439795A patent/DE2439795C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5231713B2 (it) | 1977-08-16 |
JPS5060185A (it) | 1975-05-23 |
US3874959A (en) | 1975-04-01 |
FR2245083A1 (it) | 1975-04-18 |
DE2439795A1 (de) | 1975-04-03 |
FR2245083B1 (it) | 1977-03-18 |
GB1448048A (en) | 1976-09-02 |
DE2439795C3 (de) | 1981-09-17 |
DE2439795B2 (de) | 1981-01-22 |
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