JPS5228538B2 - - Google Patents

Info

Publication number
JPS5228538B2
JPS5228538B2 JP47091809A JP9180972A JPS5228538B2 JP S5228538 B2 JPS5228538 B2 JP S5228538B2 JP 47091809 A JP47091809 A JP 47091809A JP 9180972 A JP9180972 A JP 9180972A JP S5228538 B2 JPS5228538 B2 JP S5228538B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47091809A
Other languages
Japanese (ja)
Other versions
JPS4838946A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4838946A publication Critical patent/JPS4838946A/ja
Publication of JPS5228538B2 publication Critical patent/JPS5228538B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP47091809A 1971-09-16 1972-09-14 Expired JPS5228538B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18098771A 1971-09-16 1971-09-16

Publications (2)

Publication Number Publication Date
JPS4838946A JPS4838946A (https=) 1973-06-08
JPS5228538B2 true JPS5228538B2 (https=) 1977-07-27

Family

ID=22662423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47091809A Expired JPS5228538B2 (https=) 1971-09-16 1972-09-14

Country Status (8)

Country Link
US (1) US3706079A (https=)
JP (1) JPS5228538B2 (https=)
BE (1) BE788583A (https=)
DE (1) DE2242332C3 (https=)
FR (1) FR2152607B1 (https=)
GB (1) GB1338856A (https=)
IT (1) IT967422B (https=)
NL (1) NL7210911A (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3765000A (en) * 1971-11-03 1973-10-09 Honeywell Inf Systems Memory storage cell with single selection line and single input/output line
US3774177A (en) * 1972-10-16 1973-11-20 Ncr Co Nonvolatile random access memory cell using an alterable threshold field effect write transistor
US3859545A (en) * 1973-12-10 1975-01-07 Bell Telephone Labor Inc Low power dynamic control circuitry
US3882472A (en) * 1974-05-30 1975-05-06 Gen Instrument Corp Data flow control in memory having two device memory cells
DE2442131B2 (de) * 1974-09-03 1976-07-08 Siemens AG, 1000 Berlin und 8000 München Dynamisches ein-transistor-speicherelement
JPS63894A (ja) * 1986-06-20 1988-01-05 Hitachi Ltd メモリ
JPH0713872B2 (ja) * 1987-11-24 1995-02-15 三菱電機株式会社 半導体記憶装置
KR950008385B1 (ko) * 1990-05-24 1995-07-28 삼성전자주식회사 반도체 소자의 워드라인 형성방법
JP2824713B2 (ja) * 1992-04-24 1998-11-18 三菱電機株式会社 半導体記憶装置
US5526305A (en) * 1994-06-17 1996-06-11 The United States Of America As Represented By The Secretary Of The Air Force Two-transistor dynamic random-access memory cell
US5657267A (en) * 1994-06-17 1997-08-12 The United States Of America As Represented By The Secretary Of The Air Force Dynamic RAM (random access memory) with SEU (single event upset) detection
US6242772B1 (en) * 1994-12-12 2001-06-05 Altera Corporation Multi-sided capacitor in an integrated circuit
US6580454B1 (en) * 1998-11-18 2003-06-17 Agilent Technologies, Inc. CMOS active pixel sensor having in-pixel local exposure control
JP2001291389A (ja) 2000-03-31 2001-10-19 Hitachi Ltd 半導体集積回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585613A (en) * 1969-08-27 1971-06-15 Ibm Field effect transistor capacitor storage cell

Also Published As

Publication number Publication date
DE2242332B2 (de) 1975-03-13
FR2152607B1 (https=) 1976-05-21
US3706079A (en) 1972-12-12
BE788583A (fr) 1973-01-02
GB1338856A (en) 1973-11-28
IT967422B (it) 1974-02-28
DE2242332A1 (de) 1973-03-29
NL7210911A (https=) 1973-03-20
FR2152607A1 (https=) 1973-04-27
JPS4838946A (https=) 1973-06-08
DE2242332C3 (de) 1975-11-13

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