JPS521877B2 - - Google Patents

Info

Publication number
JPS521877B2
JPS521877B2 JP47096007A JP9600772A JPS521877B2 JP S521877 B2 JPS521877 B2 JP S521877B2 JP 47096007 A JP47096007 A JP 47096007A JP 9600772 A JP9600772 A JP 9600772A JP S521877 B2 JPS521877 B2 JP S521877B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47096007A
Other languages
Japanese (ja)
Other versions
JPS4953386A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47096007A priority Critical patent/JPS521877B2/ja
Priority to GB4475173A priority patent/GB1429696A/en
Priority to CA181,779A priority patent/CA1004780A/en
Priority to FR7334414A priority patent/FR2200636B1/fr
Priority to IT52725/73A priority patent/IT994322B/it
Priority to NLAANVRAGE7313221,A priority patent/NL184814C/xx
Priority to DE19732348262 priority patent/DE2348262A1/de
Publication of JPS4953386A publication Critical patent/JPS4953386A/ja
Publication of JPS521877B2 publication Critical patent/JPS521877B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615Combinations of vertical BJTs and one or more of resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00Highly-doped buried regions of integrated devices
    • H10W15/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP47096007A 1972-09-25 1972-09-25 Expired JPS521877B2 (https=)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP47096007A JPS521877B2 (https=) 1972-09-25 1972-09-25
GB4475173A GB1429696A (https=) 1972-09-25 1973-09-24
CA181,779A CA1004780A (en) 1972-09-25 1973-09-24 Semiconductor integrated circuit mis structure
FR7334414A FR2200636B1 (https=) 1972-09-25 1973-09-25
IT52725/73A IT994322B (it) 1972-09-25 1973-09-25 Circuito integrato a semiconduttore
NLAANVRAGE7313221,A NL184814C (nl) 1972-09-25 1973-09-25 Geintegreerde halfgeleiderschakeling.
DE19732348262 DE2348262A1 (de) 1972-09-25 1973-09-25 Integrierte halbleiterschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47096007A JPS521877B2 (https=) 1972-09-25 1972-09-25

Publications (2)

Publication Number Publication Date
JPS4953386A JPS4953386A (https=) 1974-05-23
JPS521877B2 true JPS521877B2 (https=) 1977-01-18

Family

ID=14153103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47096007A Expired JPS521877B2 (https=) 1972-09-25 1972-09-25

Country Status (7)

Country Link
JP (1) JPS521877B2 (https=)
CA (1) CA1004780A (https=)
DE (1) DE2348262A1 (https=)
FR (1) FR2200636B1 (https=)
GB (1) GB1429696A (https=)
IT (1) IT994322B (https=)
NL (1) NL184814C (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163398A (ja) * 2009-01-16 2010-07-29 Hisamitsu Pharmaceut Co Inc シート状貼付剤

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994450A (ja) * 1982-11-19 1984-05-31 Nec Kyushu Ltd 半導体装置の製造方法
US5177587A (en) * 1989-07-21 1993-01-05 Linear Technology Corporation Push-back junction isolation semiconductor structure and method
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539873B2 (de) * 1966-10-18 1971-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Transistor
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
FR2036530A5 (https=) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163398A (ja) * 2009-01-16 2010-07-29 Hisamitsu Pharmaceut Co Inc シート状貼付剤

Also Published As

Publication number Publication date
IT994322B (it) 1975-10-20
FR2200636B1 (https=) 1978-06-30
NL184814B (nl) 1989-06-01
GB1429696A (https=) 1976-03-24
NL7313221A (https=) 1974-03-27
JPS4953386A (https=) 1974-05-23
DE2348262A1 (de) 1974-04-18
NL184814C (nl) 1989-11-01
FR2200636A1 (https=) 1974-04-19
CA1004780A (en) 1977-02-01

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